Showing papers by "Puqi Ning published in 2010"

A high power density single phase PWM rectifier with active ripple energy storage

Abstract: It is well known that there exist second-order harmonic current and corresponding ripple voltage on dc bus for single phase PWM rectifiers. The low frequency harmonic current is normally filtered using a bulk capacitor in the bus which results in low power density. This paper proposed an active ripple energy storage method that can effectively reduce the energy storage capacitance. The feed-forward control method and design considerations are provided. Simulation and 15kW experimental results are provided for verification purposes.

SiC Wirebond Multichip Phase-Leg Module Packaging Design and Testing for Harsh Environment

Abstract: In order to take full advantage of SiC, a high-temperature wirebond package for multichip phase-leg power module using SiC devices was designed, developed, fabricated, and tested. The details of the material comparison and selection are described, thus culminating a feasible solution for high-temperature operation. A thermal cycling test with large temperature excursion (from -55°C to 250°C) was carried out to evaluate the thermomechanical reliability of the package. During the test, the substrate failed before other parts in 20 cycles. A sealing edge approach was proposed to improve the thermal reliability of the substrate. With the strengthening of the sealing material, the substrate, die-attachment, and wirebond assemblies exhibited satisfactoriness in the thermomechanical reliability tests. In order to evaluate the high-temperature operation ability of designed package, one prototype module was designed and fabricated. The high-temperature continuous power test shows that the package presented in this paper can perform well at 250°C junction temperature.

A Novel High-Temperature Planar Package for SiC Multichip Phase-Leg Power Module

Abstract: This paper presents the design, development, and testing of a phase-leg power module packaged by a novel planar packaging technique for high-temperature (250°C) operation. The nanosilver paste is chosen as the die-attach material as well as playing the key functions of electrically connecting the devices' pads. The electrical characteristics of the SiC-based power semiconductors, SiC JFETs, and SiC Schottky diodes have been measured and compared before and after packaging. No significant changes (<;5%) are found in the characteristics of all the devices. Prototype module is fabricated and operated up to 400 V, 1.4 kW at junction temperature of 250°C in the continuous power test. Thermomechanical robustness has also been investigated by passive thermal cycling of the module from -55°C to 250°C. Electrical and mechanical performances of the packaged module are characterized and considered to be reliable for at least 200 cycles.

A Shoot-Through Protection Scheme for Converters Built With SiC JFETs

Abstract: The SiC JFET is an attractive semiconductor device due to its superior switching performance and high-temperature operating capability. Its shoot-through protection remains a challenge due to the limited practical knowledge existent on this device and due to its inherent normally on nature. Addressing this limitation, this paper presents a novel shoot-through protection scheme in which a bidirectional switch, compounded by a Si insulated-gate bipolar transistor (IGBT) and a relay,is embedded into the dc-link midpoint in order to detect and clear shoot-through faults, taking advantage of the well-known desaturation protection schemes of IGBTs to protect SiC JFETs. This paper describes in detail the proposed protection mechanism and its circuit design, presenting as well the experimental results that verified the effectiveness of the proposed scheme using, first, Si MOSFETs and second, a 10-kW ac-ac converter system using SiC JFETs.

A High-Power-Density Converter

Abstract: This article presents the development and experimental performance of a 10-kW high-power-density three-phase ac-dc-ac converter. The converter consists of a Vienna-type rectifier front end and a two-level voltage source inverter (VSΓ)To reduce the switching loss and achieve a high operating junction temperature, the SiC JFET and SiC Schottky diode are used. Design considerations for the phase-leg units, gate drivers, integrated input filter-combining electromagnetic interference (EMI) and boost inductor stages-and the system protection are described in full detail. Experiments are carried out under different operating conditions, and the results obtained verify the performance and feasibility of the proposed converter system.

Design of high-temperature SiC three-phase AC-DC converter for >100°C ambient temperature

Abstract: High temperature (HT) converters have become more and more important in industrial applications where the converters will operate in a harsh environment. These environments require the converter to have not only high-temperature semiconductor devices (SiC, GaN) but also high-temperature control electronics. This paper describes a design process for a three-phase PWM rectifier. The SiC JFET planar structure is used for the main semiconductor devices. Other high-temperature components, including the passive components, silicon-on-insulator chips and the auxiliary components are studied and summarized. Finally, a 1.4 kW lab prototype is fabricated and tested for verification.

High-density system integration for medium power applications

Abstract: Over the past ten years, there has been increased incorporation of electronic power processing into alternative, sustainable, and distributed energy sources, as well as energy storage systems, cars, airplanes, ships, homes, data centers, and the power grid. The goals have been to reduce the size, weight, and maintenance and operational costs of these power systems, while increasing overall energy efficiency, safety, and reliability. This paper summarizes some of the authors' research efforts in the last four years on the improvements in power density and physical integration of power converters, mostly for vehicular applications. Several approaches to integration of active components into high-temperature modules are presented together with examples of the evaluation and modeling of 1.2 kV SiC JFET and MOSFET. Possible improvements in the power density through hybrid passive and active integration of an EMI filter and of an energy storage capacitor in single-phase PWM rectifier are also shown. Examples of converter integration for a 10 kW motor drive with active front-end using SiC devices operating at 250 °C, and for paralleling three-phase boost rectifiers with interleaved PWM are presented.

High Temperature SiC Power Module Electrical Evaluation Procedure

Abstract: To take full advantage of silicon carbide semiconductor devices, high-temperature device packaging needs to be developed. This paper describes potential defects from design and fabrication procedures, and presents a systematic electrical evaluation process to detect such defects. This systematic testing procedure can rapidly detect many defects and reduce the risk in high-temperature packaging testing. A multichip module development procedure that uses this testing procedure is also presented and demonstrated with an example.

Automatic layout design for power module

Abstract: The layout of power modules is one of the key points in power module design, especially for high power densities, where couplings are increased. In this paper, along with the design example, an automatic design processes by using genetic algorithm are presented. Some practical considerations and implementations are introduced in the optimization of the layout design of the module.