Wide bandgap semiconductors show superior material properties enabling potential power device operation at higher temperatures, voltages, and switching speeds than current Si technology. As a result, a new generation of power devices is being developed for power converter applications in which traditional Si power devices show limited operation. The use of these new power semiconductor devices will allow both an important improvement in the performance of existing power converters and the development of new power converters, accounting for an increase in the efficiency of the electric energy transformations and a more rational use of the electric energy. At present, SiC and GaN are the more promising semiconductor materials for these new power devices as a consequence of their outstanding properties, commercial availability of starting material, and maturity of their technological processes. This paper presents a review of recent progresses in the development of SiC- and GaN-based power semiconductor devices together with an overall view of the state of the art of this new device generation.

A Survey of Wide Bandgap Power Semiconductor Devices

DC microgrids (MGs) have been gaining a continually increasing interest over the past couple of years both in academia and industry. The advantages of dc distribution when compared to its ac counterpart are well known. The most important ones include higher reliability and efficiency, simpler control and natural interface with renewable energy sources, and electronic loads and energy storage systems. With rapid emergence of these components in modern power systems, the importance of dc in today's society is gradually being brought to a whole new level. A broad class of traditional dc distribution applications, such as traction, telecom, vehicular, and distributed power systems can be classified under dc MG framework and ongoing development, and expansion of the field is largely influenced by concepts used over there. This paper aims first to shed light on the practical design aspects of dc MG technology concerning typical power hardware topologies and their suitability for different emerging smart grid applications. Then, an overview of the state of the art in dc MG protection and grounding is provided. Owing to the fact that there is no zero-current crossing, an arc that appears upon breaking dc current cannot be extinguished naturally, making the protection of dc MGs a challenging problem. In relation with this, a comprehensive overview of protection schemes, which discusses both design of practical protective devices and their integration into overall protection systems, is provided. Closely coupled with protection, conflicting grounding objectives, e.g., minimization of stray current and common-mode voltage, are explained and several practical solutions are presented. Also, standardization efforts for dc systems are addressed. Finally, concluding remarks and important future research directions are pointed out.

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DC Microgrids—Part II: A Review of Power Architectures, Applications, and Standardization Issues

DC-link capacitors are an important part in the majority of power electronic converters which contribute to cost, size and failure rate on a considerable scale. From capacitor users' viewpoint, this paper presents a review on the improvement of reliability of dc link in power electronic converters from two aspects: 1) reliability-oriented dc-link design solutions; 2) conditioning monitoring of dc-link capacitors during operation. Failure mechanisms, failure modes and lifetime models of capacitors suitable for the applications are also discussed as a basis to understand the physics-of-failure. This review serves to provide a clear picture of the state-of-the-art research in this area and to identify the corresponding challenges and future research directions for capacitors and their dc-link applications.

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Reliability of Capacitors for DC-Link Applications in Power Electronic Converters—An Overview

Droop control is the basic control method for load current sharing in dc microgrid applications. The conventional dc droop control method is realized by linearly reducing the dc output voltage as the output current increases. This method has two limitations. First, with the consideration of line resistance in a droop-controlled dc microgrid, since the output voltage of each converter cannot be exactly the same, the output current sharing accuracy is degraded. Second, the dc-bus voltage deviation increases with the load due to the droop action. In this paper, in order to improve the performance of the dc microgrid operation, a low-bandwidth communication (LBC)-based improved droop control method is proposed. In contrast with the conventional approach, the control system does not require a centralized secondary controller. Instead, it uses local controllers and the LBC network to exchange information between converter units. The droop controller is employed to achieve independent operation, and the average voltage and current controllers are used in each converter to simultaneously enhance the current sharing accuracy and restore the dc bus voltage. All of the controllers are realized locally, and the LBC system is only used for changing the values of the dc voltage and current. Hence, a decentralized control scheme is accomplished. The simulation test based on MATLAB/Simulink and the experimental validation based on a 2 × 2.2 kW prototype were implemented to demonstrate the proposed approach.

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An Improved Droop Control Method for DC Microgrids Based on Low Bandwidth Communication With DC Bus Voltage Restoration and Enhanced Current Sharing Accuracy

Gallium nitride (GaN) power devices are an emerging technology that have only recently become available commercially. This new technology enables the design of converters at higher frequencies and efficiencies than those achievable with conventional Si devices. This paper reviews the characteristics and commercial status of both vertical and lateral GaN power devices, providing the background necessary to understand the significance of these recent developments. In addition, the challenges encountered in GaN-based converter design are considered, such as the consequences of faster switching on gate driver design and board layout. Other issues include the unique reverse conduction behavior, dynamic $R_{\mathrm {{ds}},\mathrm {{on}}}$ , breakdown mechanisms, thermal design, device availability, and reliability qualification. This review will help prepare the reader to effectively design GaN-based converters, as these devices become increasingly available on a commercial scale.

Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges

It is well known that single-phase pulse width modulation rectifiers have second-order harmonic currents and corresponding ripple voltages on the dc bus. The low-frequency harmonic current is normally filtered using a bulk capacitor in the bus, which results in low power density. However, pursuing high power density in converter design is a very important goal in the aerospace applications. This paper studies methods for reducing the energy storage capacitor for single-phase rectifiers. The minimum ripple energy storage requirement is derived independently of a specific topology. Based on the minimum ripple energy requirement, the feasibility of the active capacitor's reduction schemes is verified. Then, we propose a bidirectional buck-boost converter as the ripple energy storage circuit, which can effectively reduce the energy storage capacitance. The analysis and design are validated by simulation and experimental results.

A High Power Density Single-Phase PWM Rectifier With Active Ripple Energy Storage

It is well known that there exist second-order harmonic current and corresponding ripple voltage on dc bus for single phase PWM rectifiers. The low frequency harmonic current is normally filtered using a bulk capacitor in the bus which results in low power density. This paper proposed an active ripple energy storage method that can effectively reduce the energy storage capacitance. The feed-forward control method and design considerations are provided. Simulation and 15kW experimental results are provided for verification purposes.

A high power density single phase PWM rectifier with active ripple energy storage

With the emerging installations of multitype renewable energy sources and energy storage elements, the dc electronic distribution systems in residential buildings (dc nanogrid) are becoming an alternative future system solution, achieving a zero net-energy consumption and optimized power management. The concept of the energy control center (ECC), which interconnects the dc system to the traditional ac utility grid, is introduced, and the operation function of ECC converter suitable for dc nanogrid application is defined. This paper investigates a two-stage topology using a full bridge in series with a bidirectional synchronous rectifier dc–dc converter as a single-phase ECC for dc nanogrid, with a significant reduction of the dc-link capacitor value. The operation analysis and the design of passive components are provided. A bidirectional control system and the design process are also presented in terms of the system requirement and the small dc-link capacitor.

Grid-Interface Bidirectional Converter for Residential DC Distribution Systems—Part One: High-Density Two-Stage Topology

This paper presents a literature overview of all techniques proposed until the submission of this paper in terms of mitigating power oscillation in single-phase applications. This pulsating energy is the major factor for increasing the size of passive components and power losses in the converter and can be responsible for losses or malfunctioning of the dc sources. Reduction of power ripple at twice the fundamental frequency is one of the key elements to increase power converter density without lack of dc stiffness. Pulsation reduction is achieved by incorporating control techniques or auxiliary circuitries with energy storage capability in reactive elements to avoid this oscillating power to propagate through the converter, creating what is called as single-phase power decoupling. The topologies are divided as: rectifiers, inverters, and bidirectional. Among them, it is possible to classify as isolated and nonisolated converters. The energy storage method may be classify as: capacitive and inductive. For the power decoupling technique, it is convenient to divide as control and topology. The power decoupling technique may be implemented as series or parallel with respect to the ac, dc or link side. This paper represents the best reference on this topic.

Low-Frequency Power Decoupling in Single-Phase Applications: A Comprehensive Overview

Gallium-nitride (GaN) technology for power conversion is maturing, with a growing need to evaluate the capabilities of GaN devices in high switching frequency and elevated ambient temperature operation. These capabilities may particularly benefit systems constrained by strict EMI standards, due to the possibility of significant size and weight reduction. An inductive load tester circuit has been developed for switching characterization of a GaN transistor (EPC1010) and a paired silicon diode (SBR10U200P5). Maximum measured switching speeds for hard switching turn-on and turn-off transitions were dv/dt (on) = 4 V/ns, di/dt (on) = 4.5 A/ns, and dv/dt (off) = 18 V/ns, di/dt (off) = 5 A/ns respectively. Total measured switching energy loss was Etot = 40 µJ under 100 V supply voltage and 15 A load current conditions, with little change with increase of transistor junction temperature from 25 °C to 100 °C. Zero-voltage switching reduced loss to only E tot = 6 µJ, thus enabling high switching frequency operation. As the switching pair of a silicon diode and an EPC1010 is not suitable in hard switching mode and high switching frequency operation due to high switching loss of the turn-on process, another tester was built. Here, two EPC1010 devices were used in a phase-leg configuration. The fastest switching speeds were dv/dt (on) = 21 V/ns, di/dt (on) = 9 A/ns, and dv/dt (off) = 20 V/ns, di/dt (off) = 2 A/ns respectively. Total measured switching energy loss was E tot = 11 µJ, under 100 V supply voltage and 15 A load current conditions.

Ruxi Wang

Papers

A High Power Density Single-Phase PWM Rectifier With Active Ripple Energy Storage

A high power density single phase PWM rectifier with active ripple energy storage

Grid-Interface Bidirectional Converter for Residential DC Distribution Systems—Part One: High-Density Two-Stage Topology

Low-Frequency Power Decoupling in Single-Phase Applications: A Comprehensive Overview

Evaluation of the switching characteristics of a gallium-nitride transistor