Wide bandgap semiconductors show superior material properties enabling potential power device operation at higher temperatures, voltages, and switching speeds than current Si technology. As a result, a new generation of power devices is being developed for power converter applications in which traditional Si power devices show limited operation. The use of these new power semiconductor devices will allow both an important improvement in the performance of existing power converters and the development of new power converters, accounting for an increase in the efficiency of the electric energy transformations and a more rational use of the electric energy. At present, SiC and GaN are the more promising semiconductor materials for these new power devices as a consequence of their outstanding properties, commercial availability of starting material, and maturity of their technological processes. This paper presents a review of recent progresses in the development of SiC- and GaN-based power semiconductor devices together with an overall view of the state of the art of this new device generation.

A Survey of Wide Bandgap Power Semiconductor Devices

Wireless power transfer (WPT) using magnetic resonance is the technology which could set human free from the annoying wires. In fact, the WPT adopts the same basic theory which has already been developed for at least 30 years with the term inductive power transfer. WPT technology is developing rapidly in recent years. At kilowatts power level, the transfer distance increases from several millimeters to several hundred millimeters with a grid to load efficiency above 90%. The advances make the WPT very attractive to the electric vehicle (EV) charging applications in both stationary and dynamic charging scenarios. This paper reviewed the technologies in the WPT area applicable to EV wireless charging. By introducing WPT in EVs, the obstacles of charging time, range, and cost can be easily mitigated. Battery technology is no longer relevant in the mass market penetration of EVs. It is hoped that researchers could be encouraged by the state-of-the-art achievements, and push forward the further development of WPT as well as the expansion of EV.

Wireless Power Transfer for Electric Vehicle Applications

DC-link capacitors are an important part in the majority of power electronic converters which contribute to cost, size and failure rate on a considerable scale. From capacitor users' viewpoint, this paper presents a review on the improvement of reliability of dc link in power electronic converters from two aspects: 1) reliability-oriented dc-link design solutions; 2) conditioning monitoring of dc-link capacitors during operation. Failure mechanisms, failure modes and lifetime models of capacitors suitable for the applications are also discussed as a basis to understand the physics-of-failure. This review serves to provide a clear picture of the state-of-the-art research in this area and to identify the corresponding challenges and future research directions for capacitors and their dc-link applications.

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Reliability of Capacitors for DC-Link Applications in Power Electronic Converters—An Overview

Silicon carbide (SiC) power devices have been investigated extensively in the past two decades, and there are many devices commercially available now. Owing to the intrinsic material advantages of SiC over silicon (Si), SiC power devices can operate at higher voltage, higher switching frequency, and higher temperature. This paper reviews the technology progress of SiC power devices and their emerging applications. The design challenges and future trends are summarized at the end of the paper.

https://ieeexplore.ieee.org/ielaam/41/8031005/7815312-aam.pdf

Review of Silicon Carbide Power Devices and Their Applications

Gallium nitride (GaN) power devices are an emerging technology that have only recently become available commercially. This new technology enables the design of converters at higher frequencies and efficiencies than those achievable with conventional Si devices. This paper reviews the characteristics and commercial status of both vertical and lateral GaN power devices, providing the background necessary to understand the significance of these recent developments. In addition, the challenges encountered in GaN-based converter design are considered, such as the consequences of faster switching on gate driver design and board layout. Other issues include the unique reverse conduction behavior, dynamic $R_{\mathrm {{ds}},\mathrm {{on}}}$ , breakdown mechanisms, thermal design, device availability, and reliability qualification. This review will help prepare the reader to effectively design GaN-based converters, as these devices become increasingly available on a commercial scale.

Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges

To further reduce system costs and package volumes of hybrid electric vehicles (HEVs), it is important to optimize the power module and associated cooling system. This paper reports the thermal performance evaluation and analysis of three commercial power modules with different cooling systems. Experiments and simulations were conducted to help further optimization of design. Results show that power electronics can be better merged with the mechanical environment.

Power module and cooling system thermal performance evaluation for HEV application

This paper presents an analytical approach for evaluating the magnet eddy-current losses of interior permanent-magnet synchronous machines (IPMSMs) during flux weakening. To investigate the magnet eddy-current losses, an analytical method of the time-varying magnetic flux density in the magnet is proposed based on the armature reaction magnetic field analysis. According to the time-varying magnetic flux density, a coefficient is used to evaluate the magnet eddy-current losses during flux weakening. The coefficient can indicate how the major design parameters in an IPMSM affect magnet eddy-current losses during flux-weakening operation. Finite-element analysis was used to validate the proposed model and calculate the magnet eddy-current losses of IPMSM with different design parameters.

An Analytical Approach to Magnet Eddy-Current Losses for Interior Permanent-Magnet Synchronous Machines During Flux Weakening

SiC Hybrid switch (HyS) combines low conduction loss of Si IGBT and low switching loss of SiC MOSFET, and the cost is closer to that of Si IGBT. The promising high performances of HyS will bring considerable achievement in terms of enhancing power density of a converter system. By reviewing the gate drive pattern, gate drive hardware, current sharing, module design, converter design, and cost, this paper introduces state-of-the-art SiC HyS.

/pdf/review-of-si-igbt-and-sic-mosfet-based-on-hybrid-switch-3ci40jkskk.pdf

Review of Si IGBT and SiC MOSFET Based on Hybrid Switch

A compact wirebond packaged phase-leg SiC/Si hybrid module was designed, developed, and tested. Details of the layout and gate drive designs are described. The IC chip for gate drive is carefully selected and compared. Dual pulse test confirmed that, the switching loss of hybrid module is close to pure SiC MOSFET module, and it is much less than pure Si IGBT device. The cost of hybrid module is closer to Si IGBT.

/pdf/a-hybrid-si-igbt-and-sic-mosfet-module-development-vyphkh60wk.pdf

A hybrid Si IGBT and SiC MOSFET module development

High efficiency and low cost coil system design is one of the key points for wireless power transfer. In this paper, along with a design example and experimental verification, a novel optimization method with generic algorithm is presented. The coil track layouts are interpreted with binary strings in the design iterations. Some practical considerations and detailed implementations are introduced in the optimization procedure.

Puqi Ning

Papers

Power module and cooling system thermal performance evaluation for HEV application

An Analytical Approach to Magnet Eddy-Current Losses for Interior Permanent-Magnet Synchronous Machines During Flux Weakening

Review of Si IGBT and SiC MOSFET Based on Hybrid Switch

A hybrid Si IGBT and SiC MOSFET module development

Genetic algorithm based coil system optimization for wireless power charging of electric vehicles