Wide bandgap semiconductors show superior material properties enabling potential power device operation at higher temperatures, voltages, and switching speeds than current Si technology. As a result, a new generation of power devices is being developed for power converter applications in which traditional Si power devices show limited operation. The use of these new power semiconductor devices will allow both an important improvement in the performance of existing power converters and the development of new power converters, accounting for an increase in the efficiency of the electric energy transformations and a more rational use of the electric energy. At present, SiC and GaN are the more promising semiconductor materials for these new power devices as a consequence of their outstanding properties, commercial availability of starting material, and maturity of their technological processes. This paper presents a review of recent progresses in the development of SiC- and GaN-based power semiconductor devices together with an overall view of the state of the art of this new device generation.

A Survey of Wide Bandgap Power Semiconductor Devices

Wireless power transfer (WPT) using magnetic resonance is the technology which could set human free from the annoying wires. In fact, the WPT adopts the same basic theory which has already been developed for at least 30 years with the term inductive power transfer. WPT technology is developing rapidly in recent years. At kilowatts power level, the transfer distance increases from several millimeters to several hundred millimeters with a grid to load efficiency above 90%. The advances make the WPT very attractive to the electric vehicle (EV) charging applications in both stationary and dynamic charging scenarios. This paper reviewed the technologies in the WPT area applicable to EV wireless charging. By introducing WPT in EVs, the obstacles of charging time, range, and cost can be easily mitigated. Battery technology is no longer relevant in the mass market penetration of EVs. It is hoped that researchers could be encouraged by the state-of-the-art achievements, and push forward the further development of WPT as well as the expansion of EV.

Wireless Power Transfer for Electric Vehicle Applications

DC-link capacitors are an important part in the majority of power electronic converters which contribute to cost, size and failure rate on a considerable scale. From capacitor users' viewpoint, this paper presents a review on the improvement of reliability of dc link in power electronic converters from two aspects: 1) reliability-oriented dc-link design solutions; 2) conditioning monitoring of dc-link capacitors during operation. Failure mechanisms, failure modes and lifetime models of capacitors suitable for the applications are also discussed as a basis to understand the physics-of-failure. This review serves to provide a clear picture of the state-of-the-art research in this area and to identify the corresponding challenges and future research directions for capacitors and their dc-link applications.

/pdf/reliability-of-capacitors-for-dc-link-applications-in-power-2b0em1025t.pdf

Reliability of Capacitors for DC-Link Applications in Power Electronic Converters—An Overview

Silicon carbide (SiC) power devices have been investigated extensively in the past two decades, and there are many devices commercially available now. Owing to the intrinsic material advantages of SiC over silicon (Si), SiC power devices can operate at higher voltage, higher switching frequency, and higher temperature. This paper reviews the technology progress of SiC power devices and their emerging applications. The design challenges and future trends are summarized at the end of the paper.

https://ieeexplore.ieee.org/ielaam/41/8031005/7815312-aam.pdf

Review of Silicon Carbide Power Devices and Their Applications

Gallium nitride (GaN) power devices are an emerging technology that have only recently become available commercially. This new technology enables the design of converters at higher frequencies and efficiencies than those achievable with conventional Si devices. This paper reviews the characteristics and commercial status of both vertical and lateral GaN power devices, providing the background necessary to understand the significance of these recent developments. In addition, the challenges encountered in GaN-based converter design are considered, such as the consequences of faster switching on gate driver design and board layout. Other issues include the unique reverse conduction behavior, dynamic $R_{\mathrm {{ds}},\mathrm {{on}}}$ , breakdown mechanisms, thermal design, device availability, and reliability qualification. This review will help prepare the reader to effectively design GaN-based converters, as these devices become increasingly available on a commercial scale.

Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges

In this paper, a genetic algorithm based converter system design procedure is presented with the feature of speed and universal. This method can better pack a high power density power converter.

Interpretation method investigation of converter system layout design

Other than conventional Fourier models, the carrier diffusion equation which retains the distributed nature of charge dynamics in power bipolar devices can be solved by a faster Finite Differential Method in PSPICE. The paper presents the physical basis and the practical consideration of a new modeling approach of PiN Diode and IGBT. The model was also verified by simulations and experiments.

A Finite Differential Method based IGBT model in PSPICE

Hybrid switch (HyS) combines low conduction loss of Si IGBT and low switching loss of SiC MOSFET. The cost of HyS is close to pure Si IGBT. The promising high performances of HyS will bring considerable achievement to enhance power density of a converter system. In this paper, a SiC/Si HyS based 1200 V/400 A three phase module was developed, and was tested in a motor drive.

The Development of a 1200V/400A SiC Hybrid Module

In this paper, a novel modeling approach for both PiN diode and IGBT is presented. In this model, the carrier diffusion equation, which retains the distributed nature of charge dynamics in bipolar power devices, is solved directly by finite difference method in PSPICE. The physical basis of this model and some practical considerations are introduced. Compared with conventional Fourier based IGBT model, the presented model keeps higher simulation speed and comparable high accuracy. These features were also verified by simulations and experiments.

A finite difference method modeling for IGBT and diode in PSPICE

In this paper, a compact planar package module design is presented for EV application. The top surfaces of dies are reprocessed and sputtered to enlarge the gate pad for easy soldering. This method can help to build a double sided-cooled thermal system in converter systems.

Puqi Ning

Papers

Interpretation method investigation of converter system layout design

A Finite Differential Method based IGBT model in PSPICE

The Development of a 1200V/400A SiC Hybrid Module

A finite difference method modeling for IGBT and diode in PSPICE

Top die surface reprocessing for planar package with double sided cooling