P
Pushpapraj Singh
Researcher at Indian Institute of Technology Delhi
Publications - 67
Citations - 457
Pushpapraj Singh is an academic researcher from Indian Institute of Technology Delhi. The author has contributed to research in topics: Non-volatile memory & Piezoresistive effect. The author has an hindex of 10, co-authored 47 publications receiving 302 citations. Previous affiliations of Pushpapraj Singh include Agency for Science, Technology and Research & Indian Institutes of Technology.
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Gate-All-Around Junctionless Nanowire MOSFET With Improved Low-Frequency Noise Behavior
TL;DR: In this article, an n-type gate-all-around (GAA) junctionless nanowire field effect transistor (JL-NWFET) along with low-frequency noise (LFN) with respect to channel doping and the gate bias voltage was presented.
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An Inductively Powered Implantable Blood Flow Sensor Microsystem for Vascular Grafts
Jia Hao Cheong,Simon Ng,Xin Liu,Rui-Feng Xue,Huey Jen Lim,Pradeep Basappa Khannur,Kok Lim Chan,Andreas Astuti Lee,Kai Kang,Li Shiah Lim,Cairan He,Pushpapraj Singh,Woo-Tae Park,Minkyu Je +13 more
TL;DR: This paper presents an inductively powered implantable blood flow sensor microsystem with bidirectional telemetry that integrates silicon nanowire sensors with tunable piezoresistivity, an ultralow-power application-specific integrated circuit (ASIC), and two miniature coils that are coupled with a larger coil in an external monitoring unit to form a passive wireless link.
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All metal nanoelectromechanical switch working at 300 °C for rugged electronics applications
You Qian,You Qian,Bo Woon Soon,Bo Woon Soon,Pushpapraj Singh,Humberto Campanella,Chengkuo Lee +6 more
TL;DR: An all metal based electrostatic nanoelectromechanical switch has been fabricated using a one mask process and high temperature cycling behavior is demonstrated in a vacuum chamber at 300 °C for more than 28 hours.
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A Cantilever-Based NEM Nonvolatile Memory Utilizing Electrostatic Actuation and Vibrational Deactuation for High-Temperature Operation
TL;DR: In this paper, a cantilever-based nanoelectro-mechanical (NEM) nonvolatile memory (NVM) with a novel write scheme for reliable memory operation at very high-operating temperature (up to 300 $ √ C$ ) in rugged electronics is proposed.
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A highly sensitive wearable flexible strain sensor based on polycrystalline MoS2 thin film.
Vaibhav Rana,Pratisha Gangwar,Jagan Singh Meena,Akhil K. Ramesh,Kunchinadka Narayana Bhat,Samaresh Das,Pushpapraj Singh +6 more
TL;DR: A cost-effective and scalable approach to fabricate large-area poly-crystalline MoS2 based flexible sensors for a wider stress range and the durability test of the fabricated sensors with body movements such as hand gestures for all the three types of strain sensors is demonstrated.