S
Samaresh Das
Researcher at Indian Institute of Technology Delhi
Publications - 134
Citations - 1885
Samaresh Das is an academic researcher from Indian Institute of Technology Delhi. The author has contributed to research in topics: Photodetector & Heterojunction. The author has an hindex of 22, co-authored 111 publications receiving 1443 citations. Previous affiliations of Samaresh Das include Tyndall National Institute & Indian Institutes of Technology.
Papers
More filters
Journal ArticleDOI
High-Speed Scalable Silicon-MoS 2 P-N Heterojunction Photodetectors
Veerendra Dhyani,Samaresh Das +1 more
TL;DR: The Si/MoS2 heterojunction is found to be sensitive to broadband wavelengths ranging from visible to near-infrared light with maximum detectivity up to ≈1.4 × 1012 Jones (2 V bias).
Journal ArticleDOI
High Efficiency Si/CdS Radial Nanowire Heterojunction Photodetectors Using Etched Si Nanowire Templates
TL;DR: In this article, the photocurrent spectra of the nanowire heterojunctions have been investigated at room temperature to study the spectral responsivity and detectivity of the core-shell nanowires.
Journal ArticleDOI
Errata to “Surface-Potential-Based Drain Current Analytical Model for Triple-Gate Junctionless Nanowire Transistors”
Renan Trevisoli,Rodrigo T. Doria,M.M. De Souza,Samaresh Das,Isabelle Ferain,Marcelo Antonio Pavanello +5 more
TL;DR: In this article, a drain current model for triple-gate n-type junctionless nanowire transistors is proposed based on the solution of the Poisson equation, which is validated using 3-D TCAD simulations where the drain current and its derivatives, the potential, and the charge density have been compared, showing a good agreement for all parameters.
Journal ArticleDOI
Wafer-Scale Synthesized MoS2/Porous Silicon Nanostructures for Efficient and Selective Ethanol Sensing at Room Temperature
TL;DR: This paper presents the performance of a highly selective ethanol sensor based on MoS2-functionalized porous silicon (PSi), and an enhancement in sensitivity and a selective response for ethanol were observed, with a minimum detection limit of 1 ppm.
Journal ArticleDOI
Mobility enhancement effect in heavily doped junctionless nanowire silicon-on-insulator metal-oxide-semiconductor field-effect transistors
Tamara Rudenko,Alexey Nazarov,Isabelle Ferain,Samaresh Das,Ran Yu,Sylvain Barraud,Pedram Razavi +6 more
TL;DR: In this article, the effective electron mobility in long-channel silicon-on-insulator junctionless multigate metal-oxide-semiconductor transistors is experimentally studied and it is found that the mobility in heavily doped narrow nanowire (NW) devices at low to moderately high carrier densities significantly exceeds that in wide (planar) devices with the same silicon thickness and doping.