Q
Qiuhui Li
Researcher at Peking University
Publications - 24
Citations - 661
Qiuhui Li is an academic researcher from Peking University. The author has contributed to research in topics: Transistor & Chemistry. The author has an hindex of 5, co-authored 11 publications receiving 303 citations. Previous affiliations of Qiuhui Li include Beijing University of Posts and Telecommunications.
Papers
More filters
Journal ArticleDOI
High-performance sub-10 nm monolayer Bi2O2Se transistors
Ruge Quhe,Junchen Liu,Jinxiong Wu,Jie Yang,Yangyang Wang,Qiuhui Li,Tianran Li,Ying Guo,Jinbo Yang,Hailin Peng,Ming Lei,Jing Lu +11 more
TL;DR: The performance limit of the monolayer (ML) Bi2O2Se metal oxide semiconductor field-effect transistors (MOSFETs) is predicted by using ab initio quantum transport simulation at the sub-10 nm gate length to allow the continuation of Moore's law down to 2-3 nm.
Journal ArticleDOI
Simulations of Quantum Transport in Sub-5-nm Monolayer Phosphorene Transistors
Ruge Quhe,Qiuhui Li,Qiaoxuan Zhang,Yangyang Wang,Han Zhang,Jingzhen Li,Xiuying Zhang,Dongxue Chen,Kaihui Liu,Yu Ye,Lun Dai,Feng Pan,Ming Lei,Jing Lu +13 more
TL;DR: In this paper, a double-gated MOSFET based on monolayer phosphorene was investigated and it is predicted that these transistors can fulfill industrial requirements for ON current, delay time, and power dissipation until the gate length is scaled down to 2 nm.
Journal ArticleDOI
Schottky barrier heights in two-dimensional field-effect transistors: from theory to experiment.
Yangyang Wang,Shiqi Liu,Qiuhui Li,Ruge Quhe,Chen Yang,Ying Guo,Xiuying Zhang,Yuanyuan Pan,Jingzhen Li,Han Zhang,Lin Xu,Bowen Shi,Hao Tang,Ying Li,Jinbo Yang,Zhiyong Zhang,Lin Xiao,Feng Pan,Jing Lu +18 more
TL;DR: From the comparison between the theoretical and experimentally observed SBHs, the emerging first-principles quantum transport simulation turns out to be the most powerful theoretical tool to calculate the SBH of a 2DSC FET.
Journal ArticleDOI
Sub 10 nm Bilayer Bi2O2Se Transistors
Jie Yang,Ruge Quhe,Qiuhui Li,Shiqi Liu,Lianqiang Xu,Lianqiang Xu,Yuanyuan Pan,Han Zhang,Xiuying Zhang,Jingzhen Li,Jiahuan Yan,Bowen Shi,Hua Pang,Lin Xu,Zhiyong Zhang,Jing Lu,Jinbo Yang +16 more
TL;DR: In this article, the performance upper limit of 2D Bi2O2Se FET in an ultrashort channel was investigated, and it was shown that the lower bound of the upper bound is lower than the upper limit for 2D MoS2 FET.
Journal ArticleDOI
Sub-10 nm two-dimensional transistors: Theory and experiment
Ruge Quhe,Lin Xu,Shiqi Liu,Chen Yang,Yangyang Wang,Hong Li,Jie Yang,Qiuhui Li,Bowen Shi,Ying Li,Yuanyuan Pan,Xiaotian Sun,Jingzhen Li,Mouyi Weng,Han Zhang,Ying Guo,Linqiang Xu,Hao Tang,Jichao Dong,Jinbo Yang,Zhiyong Zhang,Ming Lei,Feng Pan,Jing Lu +23 more
TL;DR: In this paper, the authors introduce the recent experimental and ab initio quantum transport simulation progress in the 2D FETs with a gate length less than 10nm and outline the challenges and outlook on the future development directions in the sub-10-nm 2D tunneling FET.