Q
Quazi D. M. Khosru
Researcher at Bangladesh University of Engineering and Technology
Publications - 162
Citations - 823
Quazi D. M. Khosru is an academic researcher from Bangladesh University of Engineering and Technology. The author has contributed to research in topics: MOSFET & Field-effect transistor. The author has an hindex of 13, co-authored 156 publications receiving 681 citations. Previous affiliations of Quazi D. M. Khosru include Hiroshima University & Bangladesh University.
Papers
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NH3-annealed atomic-layer-deposited silicon nitride as a high-k gate dielectric with high reliability
TL;DR: In this paper, a gate dielectric was formed at low temperatures (⩽550 °C) by an atomic-layerdeposition (ALD) technique with subsequent NH3 annealing at 550 ô°C.
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Effect of biomolecule position and fill in factor on sensitivity of a Dielectric Modulated Double Gate Junctionless MOSFET biosensor
TL;DR: The effect of drain bias on sensitivity has been found to be a crucial factor for the optimization of biosensor's detection capability.
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Degradation of inversion layer electron mobility due to interface traps in metal‐oxide‐semiconductor transistors
TL;DR: In this paper, the degradation of inversion layer electron mobility during Fowler-Nordheim electron injection has been investigated using n-channel metaloxide-semiconductor transistors and the change of the reciprocal effective mobility, Δ(1/μEFF), has been found to be linearly related to the generated interface trap density, ΔNit, at a given effective electric field normal to the Si/SiO2 interface.
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Monolayer MoS2 and WSe2 Double Gate Field Effect Transistor as Super Nernst pH sensor and Nanobiosensor
TL;DR: In this article, a novel MoS2 and WSe2 monolayer double gate FETs are proposed for pH sensor operation in Super Nernst regime and protein detection.
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Generation and relaxation phenomena of positive charge and interface trap in a metal‐oxide‐semiconductor structure
TL;DR: In this article, a model based on first-order trapping kinetics is presented to describe hole trapping phenomena including the dispersive nature of capture cross-section, and a universal relationship between hole trapping and interface trap generation is observed experimentally, which implies direct involvement of holes in the formation of interface traps at Si/SiO2 interface.