Kenji Taniguchi

TL;DR: In this article, the spectral distribution of the emitted light of an n-channel MOSFET operating in the saturation region has been investigated for the first time, and the energy state of hot electrons is described as a Maxwell-Boltzmann distribution.

TL;DR: In this paper, the electron mobility in the inversion layer of a metal-oxide semiconductor field effect transistor formed on the (100) silicon surface is calculated by using a Monte Carlo approach which takes into account size quantization, acoustic phonon scattering, intervalley phonon and surface roughness scattering.

TL;DR: In this article, the electroreflectance of Cd x Hg 1-x Te alloys for x from 0 to 0.70 and for x = 0.97 and x = 1 was measured by the electrolyte technique in the range of photon energy 0.5 to 6 eV at room temperature.

TL;DR: Using a grating pattern of parallel nitride and oxide stripes on the silicon surface, self-interstitial concentration at the Si/SiO2 interface is accurately determined by means of oxidation-induced stacking fault growth observation as discussed by the authors.

TL;DR: In this paper, the authors investigated the soft breakdown properties of thin gate oxide films using a constant current stress measurement and showed that all types of breakdown originate from the same precursor and the magnitude of the following local heating due to the transient current in a conductive micro spot determines the charge conduction properties after a breakdown event.