R. E. Nahory

TL;DR: In this article, the authors used chemical-beam epitaxy under closed-loop ellipsometric control to grow a parabolic alxGa1−xAs structure whose compositions vary continuously with thickness according to a given input function.

TL;DR: In this paper, optically pumped laser action in (Zn,Cd)Se/ZnSe multiple quantum well structures prepared by molecular beam epitaxy on lattice matched bulk (Ga,In)As substrates was reported.

TL;DR: In this article, the authors studied six GaAs/AlAs superlattices with periods ranging from 18 to 60 A and different average aluminum composition and found that the lowest energy transitions arise from an exciton involving a heavy hole state mostly confined in the GaAs layer and at the Brillouin zone center (Λ), and an electronic state of X character confined in AlAs layers.

TL;DR: In this paper, the optoelectronic properties of ZnSe1−xTex alloys grown by molecular beam epitaxy over the entire range of compositions were investigated and the main luminescence emission observed at 5 K becomes narrower and closer to the band-gap energy as the Te content increases.

TL;DR: In this article, it was shown that the deleterious effect of the reaction of arsine with the underlying GaInP, when growing GaAs on GaAs, can be overcome by the growth of a thin (≈0.8 nm) GaP interfacial layer, and the usefulness of X-ray rocking curve simulations in aiding the understanding and control of heterointerfaces.