Integrated optics and new wave phenomena in optical waveguides

Measurements of lattice parameters and compositions for In1−xGaxAsyP1−y lattice matched to InP demonstrate the validity of Vegard’s law for this quaternary. The measured compositional dependence of the band gap shows a bowing parameter smaller than predicted from the previously measured band gaps of the four constituent ternaries.

Band gap versus composition and demonstration of Vegard’s law for In1−xGaxAsyP1−y lattice matched to InP

The methods for calculation of material parameters in compound alloys are discussed, and the results for AlxGa1−xAsySb1−y, GaxIn1−xAsySb1−y, and InPxAsySb1−x−y quaternaries lattice matched to GaSb and InAs are presented. These quaternary systems may provide the basis for optoelectronic devices operating over the 2–4‐μm wavelength range. The material parameters considered are: the lattice constant, the lowest direct‐ and indirect‐gap energies, and the refractive index. The model used is based on an interpolation scheme, and the effects of compositional variations are properly taken into account in the calculations. Key properties of the material parameters for a variety of optoelectronic device applications are also discussed in detail.

Band gaps and refractive indices of AlGaAsSb, GaInAsSb, and InPAsSb: Key properties for a variety of the 2–4‐μm optoelectronic device applications

We compare different designs for very high-speed (millimeter-wave) long-wavelength photodetectors, different materials for such detectors, and different ways of characterizing the speed of these devices. Experimental results are given, showing high-speed response with bandwidths beyond 50 GHz, impulse responses less than 10 ps, and detection sensitivities to 0.1 fJ in packaged devices. Discussed is the inherent bandwidth-efficiency limit in conventional p-i-n detectors, which is then compared to theoretical and experimental results for waveguide-geometry detectors.

Ultrawide-band long-wavelength p-i-n photodetectors

We review the current status of guided-wave optical communication devices. The operation and presently demonstrated performance characteristics of waveguides switches, modulators, filters, and polarization transforming devices are discussed. Emphasis is given to recent developments with very high speed modulators and polarization insensitive devices.

Guided-wave devices for optical communication

A two‐phase supercooled solution method is described for the LPE growth of In1−xGaxAsyP1−y on 〈100〉 InP over the entire range of lattice‐matched compositions, 0⩾y<1, 0?x<0.47. Liquid and solid compositions, distribution coefficients, and band‐gap data which may be used to design specific devices are presented.

Liquid phase epitaxial In1−xGaxAsyP1−y lattice matched to 〈100〉 InP over the complete wavelength range 0.92⩽λ⩽1.65 μm

The Liquid Phase Epitaxy of Al y Ga1 − y As1 − x Sb x and the Importance of Strain Effects near the Miscibility Gap

We report In1−xGaxAsyP1−y/InP photodiode detectors with external quantum efficiencies of 50–70% without antireflection coating. The short‐ and long‐wavelength response limits of these very efficient detectors can be compositionally tuned to lie anywhere in the wavelength range 0.9<λ<1.7 μm.

High‐efficiency In1−xGaxAsyP1−y/InP photodetectors with selective wavelength response between 0.9 and 1.7 μm

Double‐heterostructure GaAs1−xSbx/AlyGa1−yAs1−xSbx injection lasers have been operated continuously at room temperature for the first time. Emission was near 1.0 μm. The lowest threshold current density observed was 2.1 kA  cm−2 dc.

Continuous operation of 1.0‐μm‐wavelength GaAs1−xSbx/AlyGa1−yAs1−xSbx double‐heterostructure injection lasers at room temperature

We report the growth and fabrication of LPE multilayer Inx Ga1 −x As homojunction LEDs. Junction edge emission in the 1.0–1.1‐μm wavelength range was obtained with external efficiencies of ∼1%. An important feature of the device structure is the incorporation of simple stepwise compositional grading for lattice matching of the substrate and p‐n junction layers.

R. E. Nahory

Papers

Liquid phase epitaxial In1−xGaxAsyP1−y lattice matched to 〈100〉 InP over the complete wavelength range 0.92⩽λ⩽1.65 μm

The Liquid Phase Epitaxy of Al y Ga1 − y As1 − x Sb x and the Importance of Strain Effects near the Miscibility Gap

High‐efficiency In1−xGaxAsyP1−y/InP photodetectors with selective wavelength response between 0.9 and 1.7 μm

Continuous operation of 1.0‐μm‐wavelength GaAs1−xSbx/AlyGa1−yAs1−xSbx double‐heterostructure injection lasers at room temperature

Efficient LPE‐grown Inx Ga1 −x As LEDs at 1–1.1‐μm wavelengths