Journal ArticleDOI
Efficient LPE‐grown Inx Ga1 −x As LEDs at 1–1.1‐μm wavelengths
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TLDR
In this article, the growth and fabrication of LPE multilayer Inx Ga1 −x As homojunction LEDs was described, and the junction edge emission in the 1.0 −1.1μm wavelength range was obtained with external efficiencies of ∼ 1%.Abstract:
We report the growth and fabrication of LPE multilayer Inx Ga1 −x As homojunction LEDs. Junction edge emission in the 1.0–1.1‐μm wavelength range was obtained with external efficiencies of ∼1%. An important feature of the device structure is the incorporation of simple stepwise compositional grading for lattice matching of the substrate and p‐n junction layers.read more
Citations
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Electron mobility and energy gap of In0.53Ga0.47As on InP substrate
TL;DR: Very uniform In0.53Ga0.47As was grown on InP by liquid phase epitaxy as mentioned in this paper, and electron mobility is 8450 cm2/V sec at 300 K and 27700 cm 2/V
Journal ArticleDOI
Liquid phase epitaxial growth of InGaAs on InP
TL;DR: In this paper, the conditions for LPE-growth of In 0.53 Ga 0.47 As lattice matched to InP and growth of InP on In 0,Ga, and As are discussed.
Journal ArticleDOI
III-V alloys for optoelectronic applications
TL;DR: In this paper, the energy bandgap values of the 9 binary compounds, 18 ternary alloys and 15 quaternary alloy comprising the family of practical III-V materials can, in principle, provide sources, detectors, and optoelectronic components over a wavelength range between 0.51 and 7.3 μm.
Journal ArticleDOI
Growth and characterization of liquid−phase epitaxial InxGa1−xAs
TL;DR: In this article, the liquid phase epitaxial growth of InxGa1−xAs (0
Journal ArticleDOI
Impact ionization coefficients for electrons and holes in In0.14Ga0.86As
TL;DR: In this article, the authors measured the impact ionization rates for electrons and holes in the direct band-gap semiconductor alloy In0.14Ga0.86As and showed that the ionization rate for holes is greater than that for electrons.
References
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On the ultimate lower limit of attenuation in glass optical waveguides
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Calculation of iii–v ternary phase diagrams: In-Ga-As and In-As-Sb
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Liquid‐Phase Epitaxy of In × GA 1 − × As
TL;DR: In this paper, the ternary phase diagram was calculated using Darken's quadratic formalism to describe the Ternary liquid and assuming the solid solution in equilibrium with the liquid to be regular.
Journal ArticleDOI
Phase diagram, crystal growth, and band structure of InxGa1-xAs
T.Y. Wu,G.L. Pearson +1 more
TL;DR: In this article, the liquidus and solidus lines in the In-rich region of the InAs-GaAs system have been established by measuring the amount of InAs which dissolved in In-Ga solutions and the solidus data from the composition of crystals grown from In-As melts by liquid epitaxy techniques.
Journal ArticleDOI
The system Ga–As–Sn: Incorporation of Sn into GaAs
TL;DR: In this paper, the incorporation of Sn from the liquid phase into the solid is controlled by equilibrium between the liquid and the crystal surface, and the incorporation is therefore influenced by the position of the Fermi level at the growing solid surface rather than in the bulk of the crystal.
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