We present a comprehensive, up-to-date compilation of band parameters for the technologically important III–V zinc blende and wurtzite compound semiconductors: GaAs, GaSb, GaP, GaN, AlAs, AlSb, AlP, AlN, InAs, InSb, InP, and InN, along with their ternary and quaternary alloys. Based on a review of the existing literature, complete and consistent parameter sets are given for all materials. Emphasizing the quantities required for band structure calculations, we tabulate the direct and indirect energy gaps, spin-orbit, and crystal-field splittings, alloy bowing parameters, effective masses for electrons, heavy, light, and split-off holes, Luttinger parameters, interband momentum matrix elements, and deformation potentials, including temperature and alloy-composition dependences where available. Heterostructure band offsets are also given, on an absolute scale that allows any material to be aligned relative to any other.

Band parameters for III–V compound semiconductors and their alloys

Integrated optics and new wave phenomena in optical waveguides

Measurements of lattice parameters and compositions for In1−xGaxAsyP1−y lattice matched to InP demonstrate the validity of Vegard’s law for this quaternary. The measured compositional dependence of the band gap shows a bowing parameter smaller than predicted from the previously measured band gaps of the four constituent ternaries.

Band gap versus composition and demonstration of Vegard’s law for In1−xGaxAsyP1−y lattice matched to InP

The methods for calculation of material parameters in compound alloys are discussed, and the results for AlxGa1−xAsySb1−y, GaxIn1−xAsySb1−y, and InPxAsySb1−x−y quaternaries lattice matched to GaSb and InAs are presented. These quaternary systems may provide the basis for optoelectronic devices operating over the 2–4‐μm wavelength range. The material parameters considered are: the lattice constant, the lowest direct‐ and indirect‐gap energies, and the refractive index. The model used is based on an interpolation scheme, and the effects of compositional variations are properly taken into account in the calculations. Key properties of the material parameters for a variety of optoelectronic device applications are also discussed in detail.

Band gaps and refractive indices of AlGaAsSb, GaInAsSb, and InPAsSb: Key properties for a variety of the 2–4‐μm optoelectronic device applications

Optical, crystallographic, and transport properties of nominally undoped n‐type and Zn doped p‐type Gax In1−xAs /InP (0.44<x<0.49) grown by liquid phase epitaxy (LPE), vapor phase epitaxy (VPE), and metal organic chemical vapor deposition (MOCVD) have been studied and related to the different growth methods. Samples grown by LPE show in general much larger luminescence intensities than the VPE samples with similar impurity concentration and less structural and compositional inhomogeneities. Peaks related to free and bound excitons and to different impurities are found in the photoluminescence and absorption spectra of the undoped samples. The binding energy of the exciton is determined to be 2.1±0.1 meV, in agreement with hydrogenic theory. A longitudinal optical (LO) phonon energy of 32±0.5 meV is derived from LO‐phonon replica of the exciton line. The dependence of the energy gap at T=2 K from the solid solution composition in the range xGa =45%–49% is determined yielding a bowing parameter of C=0.475 a...

Optical and crystallographic properties and impurity incorporation of GaxIn1−xAs (0.44<x<0.49) grown by liquid phase epitaxy, vapor phase epitaxy, and metal organic chemical vapor deposition

The first operation of an integrated p-i-n-photodiode/f.e.t.-amplifier on a single wafer of In0.53Ga0.47As grown lattice matched to an InP substrate is reported.

Integrated In0.53Ga0.47As p-i-n f.e.t. photoreceiver

A two‐phase supercooled solution method is described for the LPE growth of In1−xGaxAsyP1−y on 〈100〉 InP over the entire range of lattice‐matched compositions, 0⩾y<1, 0?x<0.47. Liquid and solid compositions, distribution coefficients, and band‐gap data which may be used to design specific devices are presented.

Liquid phase epitaxial In1−xGaxAsyP1−y lattice matched to 〈100〉 InP over the complete wavelength range 0.92⩽λ⩽1.65 μm

Measurements and calculations of the GaInAsSb phase diagram near 530°C are reported. Epitaxial growth of compositions lattice-matched to GaSb is demonstrated over the range 0 ≤ x ≲ 0.22 before encountering the expected miscibility gap. Photoluminescence measurements yield bandgap energies from 0.73 eV for GaSb down to 0.53 eV at x = 0.22, indicating the potential application of these materials for optoelectronic devices operating at wavelengths between 1.71μm and 2.33μm.

Liquid phase epitaxial Ga 1-x In x As y Sb 1-y lattice-matched to (100) GaSb over the 1.71 to 2.33μm wavelength range

We report the temperature dependence of threshold for InGaAsP d.h. lasers with wavelengths from 1.23 to 1.53 ?m. Our results suggest that a recombination centre, rather than carrier leakage, is responsible for the temperature sensitivity of the thresholds.

Temperature dependence of InGaAsP double-heterostructure laser characteristics

GaInAsSb/GaSb p‐n heterojunction photodiodes prepared by liquid phase epitaxy are described. The low net acceptor concentration obtained by Te compensation of the quaternary layer permits a room‐temperature external quantum efficiency of 67±5% to be achieved at a wavelength of 2.2 μm.

J. C. DeWinter

Papers

Integrated In0.53Ga0.47As p-i-n f.e.t. photoreceiver

Liquid phase epitaxial In1−xGaxAsyP1−y lattice matched to 〈100〉 InP over the complete wavelength range 0.92⩽λ⩽1.65 μm

Liquid phase epitaxial Ga 1-x In x As y Sb 1-y lattice-matched to (100) GaSb over the 1.71 to 2.33μm wavelength range

Temperature dependence of InGaAsP double-heterostructure laser characteristics

High performance GaInAsSb/GaSb p‐n photodiodes for the 1.8–2.3 μm wavelength range