Journal ArticleDOI
Liquid phase epitaxial In1−xGaxAsyP1−y lattice matched to 〈100〉 InP over the complete wavelength range 0.92⩽λ⩽1.65 μm
TLDR
In this article, a two-phase supercooled solution method is described for the LPE growth of In1−xGaxAsyP1−y on 〈100〉 InP over the entire range of lattice matched compositions, 0⩾y<1, 0?x<0.47.Abstract:
A two‐phase supercooled solution method is described for the LPE growth of In1−xGaxAsyP1−y on 〈100〉 InP over the entire range of lattice‐matched compositions, 0⩾y<1, 0?x<0.47. Liquid and solid compositions, distribution coefficients, and band‐gap data which may be used to design specific devices are presented.read more
Citations
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Journal ArticleDOI
Band gap versus composition and demonstration of Vegard’s law for In1−xGaxAsyP1−y lattice matched to InP
TL;DR: In this article, the validity of Vegard's law for In1−xGaxAsyP1−y lattice matched to InP was demonstrated for this quaternary, and the measured compositional dependence of the band gap showed a bowing parameter smaller than predicted from previously measured band gaps of the four constituent ternaries.
Journal ArticleDOI
Ga 0.47 In 0.53 As: A ternary semiconductor for photodetector applications
TL;DR: In this article, the physical properties related to the crystal growth and carrier transport are discussed in terms of both the design and the operating characteristics of detectors fabricated from this ternary alloy.
Journal ArticleDOI
Optical parameters of InP-based waveguides
F. Fiedler,Andreas Schlachetzki +1 more
TL;DR: In this paper, the quaternary alloys InGaAsP, matched in their lattice constant to InP, are considered in view of optical-waveguide applications and the parameters, most important in this connexion, are the refractive index n and the optical absorption coefficient α.
Journal ArticleDOI
Phase diagrams of InGaAsP, InGaAs and InP lattice-matched to (100)InP
TL;DR: In this paper, the phase diagrams of the binary and ternary limits, InP and In0.53Ga0.47As, respectively, were measured in the temperature range between 500 and 680 °C.
Journal ArticleDOI
GaInAsP/InP stripe‐geometry laser with a reactive‐ion‐etched facet
TL;DR: In this paper, the first use of reactive ion etching (RIE) to form mirror facets on GaInAsP/Inp double-heterostructure (DH) lasers (λ∼1.3 μm) was reported.
References
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Journal ArticleDOI
In 1-x Ga x As y P 1-y /InP DH lasers fabricated on InP
TL;DR: In this article, 1-x Ga x As y P 1-y /InP double heterostructure (DH) laser diodes with emission wavelengths of 1.25-1.35 µm at room temperature were fabricated on
Journal ArticleDOI
Growth and Characterization of InP ‐ lnGaAsP Lattice-Matched Heterojunctions
G. A. Antypas,R. L. Moon +1 more
Journal ArticleDOI
Phase Diagram of the In‐Ga‐As‐P Quaternary System and LPE Growth Conditions for Lattice Matching on InP Substrates
TL;DR: In this paper, the phase diagram of the quaternary system has been determined experimentally for several As isoconcentration sections at 600° and 650°C, and the liquidus data were determined from liquid phase epitaxial layers grown on substrates by using EPMA.
Journal ArticleDOI
Growth and characterization of InGaAsP–InP lattice‐matched heterojunctions
TL;DR: In this article, the conditions of growth of In1−xGaxAsyP1−y lattice matched to InP by the liquid phase epitaxy technique on (111) B-oriented substrates have been analyzed.
Journal ArticleDOI
InP‐GaxIn1−xAsyP1−y double heterostructure for 1.5 μm wavelength
Haruo Nagai,Yoshio Noguchi +1 more
TL;DR: In this article, double-heterostructure LED's in a 1.5μm-wavelength region have been fabricated by the LPE method, and the halfwidth value of the spectrum is about 1100 A.