R
R. M. Cohen
Researcher at University of Utah
Publications - 28
Citations - 1397
R. M. Cohen is an academic researcher from University of Utah. The author has contributed to research in topics: Epitaxy & Trimethylindium. The author has an hindex of 19, co-authored 28 publications receiving 1349 citations.
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Photoluminescence of InSb, InAs, and InAsSb grown by organometallic vapor phase epitaxy.
TL;DR: In this paper, the infrared photoluminescence (PL) from InSb, InAs, and InAs1−xSbx (x < 0.3) epitaxial layers grown by atmospheric pressure organometallic vapor phase epitaxy has been investigated for the first time over an extended temperature range.
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Effect of mismatch strain on band gap in III‐V semiconductors
TL;DR: In this paper, the photoluminescence peak energies of the epilayers with the best experimental relation of band gap versus composition for unstrained layers were determined by comparing the peak energy of the Epilayers.
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GaAs1−xSbx growth by OMVPE
TL;DR: In this article, the metastable alloys covering this entire composition range have been grown by organometallic vapor phase epitaxy (OMVPE) using trimethyl gallium, antimony and -arsenic as the source materials.
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Organometallic vapor phase epitaxial growth and characterization of InAsBi and InAsSbBi
TL;DR: In this article, the surface morphologies for both InAsBi and InAsSbBi epitaxial layers were obtained at a growth temperature of 400 °C, where a key growth parameter is the V/III ratio.
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OMVPE growth of InP using TMIn
TL;DR: In this article, the organometallic vapor phase epitaxial (OMVPE) growth of InP was described for a simple, atmospheric-pressure system using trimethylindium (TMIn) as the In source.