Journal ArticleDOI
Photoluminescence of InSb, InAs, and InAsSb grown by organometallic vapor phase epitaxy.
TLDR
In this paper, the infrared photoluminescence (PL) from InSb, InAs, and InAs1−xSbx (x < 0.3) epitaxial layers grown by atmospheric pressure organometallic vapor phase epitaxy has been investigated for the first time over an extended temperature range.Abstract:
Infrared photoluminescence (PL) from InSb, InAs, and InAs1−xSbx (x<0.3) epitaxial layers grown by atmospheric pressure organometallic vapor phase epitaxy has been investigated for the first time over an extended temperature range. The values of full width at half maximum of the PL peaks show that the epitaxial layer quality is comparable to that grown by molecular‐beam epitaxy. The observed small peak shift with temperature for most InAs1−xSbx epilayers may be explained by wave‐vector‐nonconserving transitions involved in the PL emission. For comparison, PL spectra from InSb/InSb and InAs/InAs show that the wave‐vector‐conserving mechanism is responsible for the PL emission. The temperature dependence of the energy band gaps, Eg, in InSb and InAs is shown to follow Varshni’s equation Eg(T)=Eg0−αT2/ (T+β). The empirical constants are calculated to be Eg0=235 meV, α=0.270 meV/K, and β=106 K for InSb and Eg0=415 meV, α=0.276 meV/K, and β=83 K for InAs.read more
Citations
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Journal ArticleDOI
Band parameters for III–V compound semiconductors and their alloys
TL;DR: In this article, the authors present a comprehensive, up-to-date compilation of band parameters for the technologically important III-V zinc blende and wurtzite compound semiconductors.
Journal ArticleDOI
Temperature dependence of semiconductor band gaps
K. P. O’Donnell,X. Chen +1 more
TL;DR: In this article, a new three-parameter fit to the temperature dependence of semiconductor band gaps was proposed, based on the semi-empirical Varshni equation.
Journal ArticleDOI
Native defects in Al2O3 and their impact on III-V/Al2O3 metal-oxide-semiconductor-based devices
TL;DR: In this article, the authors report hybrid density functional calculations for vacancies, self-interstitials, and antisites in Al2O3 and find that oxygen vacancies are the defects most likely to introduce gap levels that may induce border traps or leakage current in a gate stack.
Journal ArticleDOI
The metal-organic chemical vapor deposition and properties of III–V antimony-based semiconductor materials
TL;DR: In this paper, the authors comprehensively review the growth of III-V antimony-based semiconductor materials using metal-organic chemical vapor deposition (MOCVD) techniques.
Journal ArticleDOI
Removal of Surface States and Recovery of Band-Edge Emission in InAs Nanowires through Surface Passivation
TL;DR: An effective approach to eliminate surface states in InAs NWs of zinc-blende and wurtzite structures and a dramatic recovery of band edge emission through surface passivation with organic sulfide octadecylthiol is demonstrated.
References
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Journal ArticleDOI
Temperature dependence of the energy gap in semiconductors
TL;DR: In this article, a relation for the variation of the energy gap (E g ) with temperature (T ) in semiconductors is proposed. And the equation satisfactorily represents the experimental data for diamond, Si, Ge, 6H-SiC, GaAs, InP and InAs.
Journal ArticleDOI
Spontaneous and Stimulated Recombination Radiation in Semiconductors
Gordon J Lasher,Frank Stern +1 more
TL;DR: In this article, the spectral line shapes of the radiation produced by band-to-band recombination of excess carriers in semi-conductors are calculated under the assumption that the momentum matrix element is the same for all initial and final states, i.e., that there is no momentum selection rule.
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Electronic Structures of Semiconductor Alloys
TL;DR: In this paper, the problem of the band structure of semiconductor alloy systems is treated by both the dielectric two-band method and by the use of an empirical (local) pseudopotential.
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InAsSb strained‐layer superlattices for long wavelength detector applications
TL;DR: In this paper, the authors proposed InAsSb strained layer superlattices (SLSs) as novel III-V semiconductor materials with the potential for long wavelength intrinsic detector applications and showed that the wavelength response of various SLSs with x ≳ 0.73 can be extended to 12 μm at 77 K through the intentional use of layer strains.