R
R.N. Thomas
Researcher at Westinghouse Electric
Publications - 38
Citations - 1209
R.N. Thomas is an academic researcher from Westinghouse Electric. The author has contributed to research in topics: Silicon & Doping. The author has an hindex of 18, co-authored 38 publications receiving 1177 citations.
Papers
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Journal ArticleDOI
Free carrier absorption in silicon
TL;DR: In this article, a simple theory is developed which predicts the transmissivity of such layers as a function of their sheet resistance and the wavelength of the radiation, and experimental data over the 2.5-20 µm wavelength and 5-500 Ω/square sheet resistance range are given for both diffused and ion-implanted layers and also for polysilicon gases.
Journal ArticleDOI
Free Carrier Absorption in Silicon
TL;DR: In this article, a simple theory is developed which predicts the transmissivity of such layers as a function of their sheet resistance and the wavelength of the radiation, and experimental data over the 2.5-20 /spl mu/m wavelength and 5-500 Omega/square sheet resistance range are given for both diffused and ion-implanted layers and also for polysilicon gates.
Journal ArticleDOI
The mirror-matrix tube: A novel light valve for projection displays
TL;DR: In this article, a completely sealed-off electron beam-addressed light valve offering high reliability, low thermal impedance, and lowvoltage operation is described, which is suitable for projection displays and is capable of producing bright high contrast images with full gray-scale range and long-term storage.
Patent
Solid state radiation sensitive field electron emitter and methods of fabrication thereof
TL;DR: In this article, a solid state radiation sensitive field emitter cathode comprising a single crystal semiconductor member having a body portion with a uniform array of closely spaced and very sharp electron emitting projections from one surface in the form of needles or whisker like members.
Journal ArticleDOI
MICROX-an all-silicon technology for monolithic microwave integrated circuits
Maurice H. Hanes,Anant K. Agarwal,Terence W O'keeffe,H.M. Hobgood,J.R. Szedon,T.J. Smith,R.R. Siergiej,P.G. McMullin,Harvey C. Nathanson,M.C. Driver,R.N. Thomas +10 more
TL;DR: The MICROX project as discussed by the authors uses very high resistivity (typically >10000 Omega -cm) silicon substrates, and NMOS transistors of effective gate length 0.25 mu m give a maximum frequency of operation, f/sub max/, of 32 GHz and f /sub T/ of 23.6 GHz in large-periphery (4 mu m*50 mu m) devices with no correction for the parasitic effects of the pads.