R
Ramanarayan Hariharaputran
Researcher at Institute of High Performance Computing Singapore
Publications - 12
Citations - 172
Ramanarayan Hariharaputran is an academic researcher from Institute of High Performance Computing Singapore. The author has contributed to research in topics: Graphene & Kinetic Monte Carlo. The author has an hindex of 6, co-authored 9 publications receiving 125 citations. Previous affiliations of Ramanarayan Hariharaputran include Agency for Science, Technology and Research.
Papers
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Journal ArticleDOI
Continuous Shape Tuning of Nanotetrapods: Toward Shape-Mediated Self-Assembly
Nimai Mishra,Wen-Ya Wu,Wen-Ya Wu,Bharathi Madurai Srinivasan,Ramanarayan Hariharaputran,Yong-Wei Zhang,Yinthai Chan,Yinthai Chan +7 more
TL;DR: In this paper, a surfactant-driven method was proposed to synthesize highly monodisperse CdSe-seeded CdS tetrapods with differing arm lengths and diameters.
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Oxygen-Promoted Chemical Vapor Deposition of Graphene on Copper: A Combined Modeling and Experimental Study
Bharathi Madurai Srinivasan,Yufeng Hao,Ramanarayan Hariharaputran,Shanti Rywkin,James Hone,Luigi Colombo,Rodney S. Ruoff,Yong-Wei Zhang +7 more
TL;DR: A phase-field model is reported on, where the effects of oxygen on the number of nuclei, the energetics at the growth front, and the graphene island morphology on Cu are included, to guide the efficient growth of large single-crystal graphene of high quality.
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pH-dependent evolution of five-star gold nanostructures: an experimental and computational study.
Zidong Wang,M. S. Bharathi,Ramanarayan Hariharaputran,Hang Xing,Longhua Tang,Longhua Tang,Jinghong Li,Yong-Wei Zhang,Yi Lu +8 more
TL;DR: A pH-directed morphology control method is provided as a facile way to synthesize and fine-tune the morphology of hierarchical gold nanostructure with morphologies in various symmetries and hierarchies, both in solution and on solid surface.
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Origin of ultrafast growth of monolayer WSe 2 via chemical vapor deposition
Shuai Chen,Junfeng Gao,Junfeng Gao,Bharathi Madurai Srinivasan,Gang Zhang,V. Sorkin,Ramanarayan Hariharaputran,Yong-Wei Zhang +7 more
TL;DR: In this paper, the authors analyze growth processes and identify two possible pathways that might achieve ultrafast growth: Path 1, fast edge attachment and ultrafast edge diffusion; Path 2, fast kink nucleation and ultra-fast kink propagation, and find that Path 1 is not viable due to the high edge diffusion barrier calculated from first-principles calculations.
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A kinetic Monte Carlo model for the growth and etching of graphene during chemical vapor deposition
Shuai Chen,Junfeng Gao,Bharathi Madurai Srinivasan,Gang Zhang,V. Sorkin,Ramanarayan Hariharaputran,Yong-Wei Zhang +6 more
TL;DR: In this article, a kinetic Monte Carlo model is proposed to predict the pattern evolution, edge structures and growth rate of graphene during chemical vapor deposition (CVD) using first-principles calculations and experimental results.