R
Rangarajan Muralidharan
Researcher at Solid State Physics Laboratory
Publications - 82
Citations - 1008
Rangarajan Muralidharan is an academic researcher from Solid State Physics Laboratory. The author has contributed to research in topics: High-electron-mobility transistor & Molecular beam epitaxy. The author has an hindex of 13, co-authored 82 publications receiving 801 citations.
Papers
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Proceedings ArticleDOI
Silicon nitride films for passivation of pHEMT based MMIC
R. Daipuria,Sindhu Dayal,Robert Laishram,Somna S. Mahajan,Dipendra Singh Rawal,K.M. Bhat,H. S. Sharma,B. K. Sehgal,Rangarajan Muralidharan +8 more
TL;DR: In this article, the passivation of psuedomorphic high electron mobility transistor (pHEMT) based MMIC's by silicon nitride films deposited by PECVD is reported.
Proceedings ArticleDOI
Scattering analysis of 2DEG in AlGaN/GaN heterostructure grown on Fe doped GaN template
TL;DR: In this article, the 2-dimensional electron gas (2DEG) in Al0.3Ga0.7N/AlN/GaN High Electron Mobility Transistor (HEMT) grown on Fe doped GaN template was investigated experimentally using temperature dependent Hall measurements and theoretically by taking into consideration different electron scattering mechanisms like polar optical phonon, dislocation and interface roughness scattering etc.
Proceedings ArticleDOI
Growth and characterization of p-hemt structures grown by molecular beam epitaxy
Rangarajan Muralidharan,T. Srinivasan,Umesh Tiwari,Satish Mehta,R.K. Jain,D.V. Sridhara Rao,K. Muraleedharan,R. Balamuralikrishnan +7 more
Journal ArticleDOI
GaAs/GaAlAs superlattice based composite IR detector for both 8–14 μm and 3–5 μm windows—A proposal
TL;DR: In this paper, a GaAs/Ga1−xAlxAs quantum-well superlattice is proposed for IR detection in atmospheric windows from 3 to 5 μm and 8 to 14 μm, in the same structure.
Posted Content
Deep sub micron normally off AlGaN/GaN MOSFET on silicon with VTH > 5V and On Current > 0.5 A/mm
Sandeep Kumar,Sandeep Vura,Surani Bin Dolmanan,Sukant K. Tripathy,Rangarajan Muralidharan,Digbijoy N. Nath +5 more
TL;DR: In this article, a deep sub-micron normally-off AlGaN/GaN HEMT with high on-current and high threshold voltage (VTH) was demonstrated by utilizing a gate recess with length and depth of 200 nm and 124 nm respectively.