D
Digbijoy N. Nath
Researcher at Indian Institute of Science
Publications - 129
Citations - 3496
Digbijoy N. Nath is an academic researcher from Indian Institute of Science. The author has contributed to research in topics: High-electron-mobility transistor & Responsivity. The author has an hindex of 29, co-authored 117 publications receiving 2769 citations. Previous affiliations of Digbijoy N. Nath include Ohio State University.
Papers
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Journal ArticleDOI
p-type doping of MoS2 thin films using Nb
Masihhur R. Laskar,Digbijoy N. Nath,Lu Ma,Edwin W. Lee,Choong Hee Lee,Thomas F. Kent,Zihao Yang,Rohan Mishra,Manuel A. Roldan,Juan Carlos Idrobo,Sokrates T. Pantelides,Stephen J. Pennycook,Roberto C. Myers,Yiying Wu,Siddharth Rajan +14 more
TL;DR: In this paper, the first demonstration of substitutional p-type doping in large area few-layer films of (0001)-oriented chemical vapor deposited MoS2 was reported, where Niobium was found to act as an efficient acceptor up to relatively high density in MoS 2 films.
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Large Area Single Crystal (0001) Oriented MoS2 Thin Films
Masihhur R. Laskar,Lu Ma,ShanthaKumar K,Pil Sung Park,Sriram Krishnamoorthy,Digbijoy N. Nath,Wu Lu,Yiying Wu,Siddharth Rajan +8 more
TL;DR: In this article, chemical vapor deposition (CVD) can be used to achieve large area electronic grade single crystal Molybdenum Disulfide (MoS2) thin films with the highest mobility reported in CVD grown films so far.
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Large area single crystal (0001) oriented MoS2
Masihhur R. Laskar,Lu Ma,Santhakumar Kannappan,Pil Sung Park,Sriram Krishnamoorthy,Digbijoy N. Nath,Wu Lu,Yiying Wu,Siddharth Rajan +8 more
TL;DR: In this paper, chemical vapor deposition (CVD) can be used to achieve large area single crystal Molybdenum Disulfide (MoS2) thin films.
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High responsivity in molecular beam epitaxy grown beta-Ga2O3 metal semiconductor metal solar blind deep-UV photodetector
Anamika Singh Pratiyush,Sriram Krishnamoorthy,Swanand V. Solanke,Zhanbo Xia,Rangarajan Muralidharan,Siddharth Rajan,Digbijoy N. Nath +6 more
TL;DR: In this paper, the authors demonstrate high spectral responsivity (SR) in MBE-grown epitaxial beta-Ga2O3-based solar blind photodetectors.
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Polarization-engineered GaN/InGaN/GaN tunnel diodes
Sriram Krishnamoorthy,Digbijoy N. Nath,Fatih Akyol,Pil Sung Park,Michele Esposto,Siddharth Rajan +5 more
TL;DR: In this paper, the design and demonstration of polarization-engineered GaN/InGaN/GaN tunnel junction diodes with high current density and low tunneling turn-on voltage was reported.