R
Rangarajan Muralidharan
Researcher at Solid State Physics Laboratory
Publications - 82
Citations - 1008
Rangarajan Muralidharan is an academic researcher from Solid State Physics Laboratory. The author has contributed to research in topics: High-electron-mobility transistor & Molecular beam epitaxy. The author has an hindex of 13, co-authored 82 publications receiving 801 citations.
Papers
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Ion beam characterization and engineering of strain in semiconductor multi-layers
S. V. S. Nageswara Rao,Anand P. Pathak,Azher M. Siddiqui,D.K. Avasthi,Claudiu Muntele,Daryush Ila,B. N. Dev,Rangarajan Muralidharan,F. Eichhorn,R. Groetzschel,Andrzej Turos +10 more
TL;DR: In this paper, the authors measure and engineer the strain in III-V compound semiconductor multi-layers using ion beams, which leads to spatial band-gap tuning for the integration of optoelectronics devices.
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Comprehensive magnetotransport characterization of two dimensional electron gas in AlGaN/GaN high electron mobility transistor structures leading to the assessment of interface roughness
Manna Kumari Mishra,Rajesh K. Sharma,Rachna Manchanda,R.K. Bag,O. P. Thakur,Rangarajan Muralidharan +5 more
TL;DR: In this article, the authors used Shubnikov de-Haas Oscillations in the temperature range of 1.8-6 K and multicarrier fitting of transverse and longitudinal resistivity as a function of magnetic field to estimate contribution of interface roughness to the mobility and the corresponding transport lifetime.
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Raman scattering from oval defects in GaAs epilayers
TL;DR: In this paper, micro-Raman investigations have been carried out at various spots in and around oval defects in epitaxially grown 〈100〉 GaAs wafers, and changes in the crystalline orientation have been observed within the oval defect structure as compared to the normal region.
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Band gap bowing parameter in pseudomorphic AlxGa1−xN/GaN high electron mobility transistor structures
TL;DR: In this article, a method for evaluation of aluminium composition in pseudomorphic AlxGa1−xN layer from the measured photoluminescence (PL) peak energy is presented.
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Raman and AFM studies of swift heavy ion irradiated InGaAs/GaAs heterostructures
S. Dhamodaran,N. Sathish,Anand P. Pathak,S.A. Khan,D.K. Avasthi,T. Srinivasan,Rangarajan Muralidharan,R. Kesavamoorthy,Dimitris Emfietzoglou +8 more
TL;DR: The effect of swift heavy ion (SHI) irradiation on InGaAs/GaAs heterostructures is studied using Raman spectroscopy and atomic force microscopy to identify different relaxation regimes.