R
Rangarajan Muralidharan
Researcher at Solid State Physics Laboratory
Publications - 82
Citations - 1008
Rangarajan Muralidharan is an academic researcher from Solid State Physics Laboratory. The author has contributed to research in topics: High-electron-mobility transistor & Molecular beam epitaxy. The author has an hindex of 13, co-authored 82 publications receiving 801 citations.
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Journal ArticleDOI
Improvements in the theory of growth of LPE layers of GaAs and interpretation of recent experiments
TL;DR: In this paper, the growth rate and the thickness of the LPE layers as a function of time are derived using a more accurate relation between the supercooling and the As concentration.
Journal ArticleDOI
Simulation of an Armoured Vehicle for Blast Loading
TL;DR: In this article, the use of numerical methods in the validation process of light armoured vehicles reduces the number of prototypes required and decreases the design time by discretizing or meshing Shell (Quad/Tria) and solid (Tetra/Hexa) elements.
Proceedings ArticleDOI
On the role of dislocations in influencing the electrical properties of HgCdTe photodiodes
Rajesh Sharma,Vishnu Gopal,Raghvendra Sahai Saxena,R.K. Bhan,Ravinder Pal,V. Dhar,Rangarajan Muralidharan +6 more
TL;DR: In this paper, the authors investigated the influence of dislocations on the electrical and photo-electric characteristics of HgCdTe photodiode and proposed an enhanced Zener-like band-to-band tunneling method in the vicinity of dislocation cores.
Journal ArticleDOI
Evolution of surface morphology of alloyed AuGe/Ni/Au ohmic contacts to GaAs microwave FETs
G. Sai Saravanan,K. Mahadeva Bhat,S. Dhamodaran,Anand P. Pathak,Rangarajan Muralidharan,H. P. Vyas,D.V. Sridhara Rao,R. Balamuralikrishnan,K. Muraleedharan +8 more
TL;DR: In this article, a model involving the phenomena of coalescence and outdiffusion occurring simultaneously was proposed to explain the evolution of surface morphology of the contact surface of an AuGe/Ni/Au ohmic contact.
Journal ArticleDOI
RBS/channeling studies of swift heavy ion irradiated InGaAs/GaAs heterostructures
S. Dhamodaran,N. Sathish,Anand P. Pathak,S.A. Khan,D.K. Avasthi,T. Srinivasan,Rangarajan Muralidharan,B. Sundaravel,K.G.M. Nair +8 more
TL;DR: In this article, the effect of swift heavy ion (SHI) irradiation on partial relaxations is discussed in detail and the dechanneling parameter and its dependence on incident ion energy has been determined.