Raphael Niepelt

TL;DR: Estimating the surface recombination velocities clearly indicates a nonabrupt p-n junction, which is in essential agreement with the model of delayed dopant incorporation in the Au-assisted vapor-liquid-solid mechanism.

TL;DR: In this paper, the authors use an alternative route for modifying the electrical, optical and magnetic properties of semiconductor nanowires: ion implantation, which is an unsolved problem and an extremely difficult task if using such a growth mechanism.

TL;DR: Gallium arsenide nanowires are grown on 100 GaAs substrates, adopting the epitaxial relation and thus growing with an angle around 35 degrees off the substrate surface, and defect formation (vacancies and interstitials) within the implantation cascade is identified as the key mechanism for bending.

TL;DR: The absolute photoluminescence intensity measured by an integrating sphere showed stable and strong UV emission from the treated samples even after several weeks, indicating unintentional incorporation of hydrogen during the plasma treatment.

TL;DR: The results reveal a successful attachment of DNA capture molecules onto the nanowire surface and the electrical field effect induced by the negatively charged attached DNA molecules should be able to control the electrical properties of the Nanowires and gives way to a ZnO nanowires-based biosensing device.