Journal ArticleDOI
Direct Determination of Minority Carrier Diffusion Lengths at Axial GaAs Nanowire p–n Junctions
Christoph Gutsche,Raphael Niepelt,M. Gnauck,Andrey Lysov,Werner Prost,Carsten Ronning,Franz-Josef Tegude +6 more
TLDR
Estimating the surface recombination velocities clearly indicates a nonabrupt p-n junction, which is in essential agreement with the model of delayed dopant incorporation in the Au-assisted vapor-liquid-solid mechanism.Abstract:
Axial GaAs nanowire p–n diodes, possibly one of the core elements of future nanowire solar cells and light emitters, were grown via the Au-assisted vapor–liquid–solid mode, contacted by electron beam lithography, and investigated using electron beam induced current measurements. The minority carrier diffusion lengths and dynamics of both, electrons and holes, were determined directly at the vicinity of the p–n junction. The generated photocurrent shows an exponential decay on both sides of the junction and the extracted diffusion lengths are about 1 order of magnitude lower compared to bulk material due to surface recombination. Moreover, the observed strong diameter-dependence is well in line with the surface-to-volume ratio of semiconductor nanowires. Estimating the surface recombination velocities clearly indicates a nonabrupt p–n junction, which is in essential agreement with the model of delayed dopant incorporation in the Au-assisted vapor–liquid–solid mechanism. Surface passivation using ammonium s...read more
Citations
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Journal ArticleDOI
Photoelectrocatalytic Materials for Solar Water Splitting
TL;DR: In this paper, a review of the advances in the development of efficient photoelectrocatalytic materials for water splitting is presented, and some strategies that can be employed in material screening and optimization for the construction of highly efficient photo-electrochemical devices for the water splitting are also discussed.
Journal ArticleDOI
Towards high efficiency nanowire solar cells
Gaute Otnes,Magnus T. Borgström +1 more
TL;DR: In this article, the development of the field with a special focus on the III-V materials due to their potential to reach high power conversion efficiencies is reviewed, and strategies and challenges in achieving efficiencies above the Shockley-Queisser limit are discussed.
Journal ArticleDOI
Design Principles for Photovoltaic Devices Based on Si Nanowires with Axial or Radial p–n Junctions
Joseph D. Christesen,Xing Zhang,Christopher W. Pinion,Thomas A. Celano,Cory J. Flynn,James F. Cahoon +5 more
TL;DR: Finite-element modeling of axial and radial Si NW p-n junctions with total diameters of ~240 nm and donor/acceptor doping levels ranging from 10(16) to 10(20) cm(-3) is presented, and it is expected that insights from finite element modeling will serve as a powerful method to guide the design of advanced nanoscale structures.
Journal ArticleDOI
Direct imaging of p-n junction in core-shell GaN wires.
Pierre Tchoulfian,Fabrice Donatini,Fabrice Donatini,Francois Levy,Amelie Dussaigne,Pierre Ferret,Julien Pernot,Julien Pernot,Julien Pernot +8 more
TL;DR: In this paper, electron beam induced current (EBIC) and secondary electron voltage constrast (VC) measurements were demonstrated to delineate the radial and axial junction existing in the 3D structure.
Journal ArticleDOI
Electron mobilities approaching bulk limits in "surface-free" GaAs nanowires
Hannah J. Joyce,Patrick Parkinson,Nian Jiang,Callum J. Docherty,Qiang Gao,Hoe Hark Tan,Chennupati Jagadish,Laura M. Herz,Michael B. Johnston +8 more
TL;DR: Comparison of photoconductivity and photoluminescence dynamics indicates that midgap GaAs surface states, and consequently surface band-bending and depletion, are effectively eliminated in these high quality heterostructures.
References
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Michael D. Kelzenberg,Daniel B. Turner-Evans,Brendan M. Kayes,Michael A. Filler,Morgan C. Putnam,Nathan S. Lewis,Harry A. Atwater +6 more
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Journal ArticleDOI
Gallium arsenide p-i-n radial structures for photovoltaic applications
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