Raquel Giulian

TL;DR: In this article, the formation of polycrystalline In1-xGaxSb films (x ǫ = 0, 0.2, 0., 4, 0, 5, and 1) deposited by magnetron sputtering on SiO2/Si substrates and a comprehensive characterization of their atomic composition, structure, and electrical properties was reported.

TL;DR: In this article, longated Pt nanocrystals (NCs) formed in SiO2 by ion implantation, thermal annealing and swift heavy ion irradiation (SHII) were analyzed by small angle X-ray scattering (SAXS) and transmission electron microscopy (TEM) measurements.

TL;DR: In this article, the X-ray yield induced by protons and H 3 + molecules channeling along the axial directions in GaAs and Si has been studied and the results obtained for the matrix analysis of GaAs carried out with the GUPIX software package indicate that the elemental concentrations around the center of the channels are in good agreement with the expected ones.

TL;DR: In this paper, the atomic level structural properties of Ge nanocrystals (Ge NCs) grown by ion implantation and thermal annealing were reported, and four different size distributions of Ge NCs were produced in amorphous SiO2 matrices, with mean diameters ranging from 4.0 to 9.0 nm as verified by SAXS measurements.

TL;DR: In this article, the synchrotron-radiation-based techniques of x-ray absorption spectroscopy and small-angle xray scattering are combined to study the structural and vibrational properties of metal nanoparticles embedded in silica.