R
Richard J. Matyi
Researcher at State University of New York System
Publications - 123
Citations - 3716
Richard J. Matyi is an academic researcher from State University of New York System. The author has contributed to research in topics: Epitaxy & Silicon. The author has an hindex of 27, co-authored 123 publications receiving 3555 citations. Previous affiliations of Richard J. Matyi include Texas Instruments & Northwestern University.
Papers
More filters
Journal ArticleDOI
Observation of discrete electronic states in a zero-dimensional semiconductor nanostructure.
TL;DR: In this paper, a three-dimensional semiconductor quantum well (quantum dot) has been investigated and the fine structure observed in resonant tunneling through the quantum dot corresponds to the discrete density of states of a zero-dimensional system.
Journal ArticleDOI
Extraordinary photoresponse in two-dimensional In(2)Se(3) nanosheets.
Robin B. Jacobs-Gedrim,Mariyappan Shanmugam,Nikhil Jain,Chris Durcan,Michael C. Murphy,Thomas Murray,Richard J. Matyi,Richard L. Moore,Bin Yu +8 more
TL;DR: The high photocurrent response is attributed to the direct band gap of In2Se3 combined with a large surface-area-to-volume ratio and a self-terminated/native-oxide-free surface, which help to reduce carrier recombination while keeping fast response, allowing for real-time detection under very low-light conditions.
Journal ArticleDOI
Defect reduction by thermal annealing of GaAs layers grown by molecular beam epitaxy on Si substrates
TL;DR: In this article, post growth thermal annealing has been used to reduce the defect density of GaAs layers grown on Si substrates by molecular beam epitaxy, and transmission electron microscopy indicates a 100× reduction of the true defect density.
Journal ArticleDOI
Particle Size, Particle Size Distribution, and Related Measurements of Supported Metal Catalysts
TL;DR: In this paper, it is shown that the most accessible and convenient combination at present is that of Fourier line profile x-ray analysis and chemisorption, albeit at the expense of some analysis in the former case.
Journal ArticleDOI
Fundamental issues in heteroepitaxy—A Department of Energy, Council on Materials Science Panel Report
Ernst G. Bauer,Brian W. Dodson,Daniel J. Ehrlich,Leonard C. Feldman,C. Peter Flynn,Michael W. Geis,J. P. Harbison,Richard J. Matyi,Paul S. Peercy,Pierre Petroff,Julia M. Phillips,Gerald B. Stringfellow,Andrew Zangwill +12 more
TL;DR: A number of nonequilibrium techniques have been developed for the growth of epitaxial semiconductors, insulators, and metals which have led to new classes of artificially structured materials as discussed by the authors.