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Richard R. A. Syms

Researcher at Imperial College London

Publications -  231
Citations -  5359

Richard R. A. Syms is an academic researcher from Imperial College London. The author has contributed to research in topics: Deep reactive-ion etching & Silicon. The author has an hindex of 38, co-authored 224 publications receiving 5152 citations. Previous affiliations of Richard R. A. Syms include Temple University & University of Liverpool.

Papers
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Surface tension-powered self-assembly of microstructures - the state-of-the-art

TL;DR: In this paper, a review of surface tension-powered self-assembly of microstructures is presented, and the demonstrated fabrication processes for accurately determining the assembled shape are discussed, and limits on accuracy and structural distortion are considered.
Book

Optical Guided Waves and Devices

TL;DR: In this article, a slab waveguide planar waveguide integrated optics optical fibres and fibre devices coupled mode devices was used for semiconductors and optic device fabrication systems and applications, where electromagnetic fields and plane waves material effects the optics of beams reflection and refraction at a single interface.
Book

Practical Volume Holography

TL;DR: In this article, the authors present a survey of volume holographic problems and their applications in the field of holographic imaging, focusing on the application of holograms in computer vision.
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Surface tension powered self-assembly of 3-D micro-optomechanical structures

TL;DR: A surface micromachining process for surface tension powered self-assembly of silicon-based microstructures is described in this paper, where parts are formed from bonded silicon-on-insulator material and rotated out-of-plane by melting photoresist pads at tow temperature.
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Monolithic MEMS quadrupole mass spectrometers by deep silicon etching

TL;DR: In this paper, a wafer-scale, batch fabrication process for constructing quadrupole mass spectrometers using microelectromechanical systems (MEMS) technology is described, which is formed from two bonded silicon-on-insulator (BSOI) substrates, which are attached together to form a monolithic block.