R
Richard Schatz
Researcher at Royal Institute of Technology
Publications - 244
Citations - 2869
Richard Schatz is an academic researcher from Royal Institute of Technology. The author has contributed to research in topics: Laser & Semiconductor laser theory. The author has an hindex of 24, co-authored 216 publications receiving 2300 citations. Previous affiliations of Richard Schatz include University of Pavia.
Papers
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Journal ArticleDOI
30 GHz direct modulation bandwidth in detuned loaded InGaAsP DBR lasers at 1.55 /spl mu/m wavelength
TL;DR: In this article, an increased resonance frequency and reduced damping of the resonance peak leading to a record high modulation bandwidth of 30GHz were observed in 1.55 mm InGaAsP DBR lasers.
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200 Gbps/Lane IM/DD Technologies for Short Reach Optical Interconnects
Xiaodan Pang,Weisheng Hu,Gunnar Jacobsen,Sergei Popov,Jiajia Chen,Oskars Ozolins,Rui Lin,Lu Zhang,Aleksejs Udalcovs,Lei Xue,Richard Schatz,Urban Westergren,Shilin Xiao +12 more
TL;DR: This article focuses on IM/DD transmissions, and provides an overview of recent research and development efforts on key enabling technologies for 200 Gbps per lane and beyond, and expects high-speed IM/ DD systems will remain advantageous in terms of system cost, power consumption, and footprint for short reach applications in the short- to mid- term perspective.
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Extended modulation bandwidth of DBR and external cavity lasers by utilizing a cavity resonance for equalization
TL;DR: In this article, the authors investigated the occurrence of a second resonance frequency in distributed Bragg reflector laser diodes and the high modulation bandwidth resulting from it, and showed that a similar behavior can be obtained in laser Diodes with a passive, low-loss, and gratingless external cavity.
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Analog modulation properties of oxide confined VCSELs at microwave frequencies
TL;DR: In this article, a comprehensive experimental evaluation of the microwave modulation characteristics of high-speed oxide-confined vertical cavity surface emitting lasers (VCSELs) emitting at 840 nm was performed.
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Longitudinal spatial instability in symmetric semiconductor lasers due to spatial hole burning
TL;DR: In this paper, a novel type of longitudinal instability due to spatial hole burning in symmetric semiconductor laser structures (DFB lasers in particular) is examined analytically and numerically.