R
Robert E. Martinez
Researcher at Harvard University
Publications - 8
Citations - 312
Robert E. Martinez is an academic researcher from Harvard University. The author has contributed to research in topics: Surface reconstruction & Overlayer. The author has an hindex of 8, co-authored 8 publications receiving 299 citations. Previous affiliations of Robert E. Martinez include University of Texas at Austin.
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Journal ArticleDOI
Direct measurement of crystal surface stress.
TL;DR: Mesure des contraintes internes d'une surface propre Si(111)7×7 par comparaison avec une surface de reference sur laquelle est adsorbee une couche monomoleculaire de Ga sous ultravide.
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Gamma Interferon Triggers Interaction between ICSBP (IRF-8) and TEL, Recruiting the Histone Deacetylase HDAC3 to the Interferon-Responsive Element
Takeshi Kuwata,Celine Gongora,Yuka Kanno,Kazuyasu Sakaguchi,Tomohiko Tamura,Tomohiko Kanno,Venkatesha Basrur,Robert E. Martinez,Ettore Appella,Todd R. Golub,Keiko Ozato +10 more
TL;DR: By associating with two different Ets family proteins, ICSBP exerts a dual function in IFN-γ-dependent gene regulation in an immune system-specific manner.
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High coverage phases of Pb on the Si(111) surface: structures and phase transitions
Ing-Shouh Hwang,Ing-Shouh Hwang,Robert E. Martinez,Chien Liu,Jene Andrew Golovchenko,Jene Andrew Golovchenko +5 more
TL;DR: In this article, the authors studied the high coverage phases of Pb on a Si(111) surface using a scanning tunneling microscope (STM) and observed that the stress fields originating from nearby reconstructions transform the IC phase into a 1 × 1 structure.
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Low‐temperature homoepitaxial growth on Si(111) mediated by thin overlayers of Au
TL;DR: In this paper, high quality homoepitaxial growth of Si on Si(111) through an overlayer of Au is shown to occur at 450-500°C, far below the temperature required for growing Si of similar quality on bare Si (111).
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Giant vibrations of impurity atoms on a crystal surface.
TL;DR: This work has measured extremely large anisotropic thermal vibrations of gallium adatoms on a Si(111) surface using x-ray standing waves and suggests a significant thermal softening of the surface bonding at elevated temperatures.