Robert W. Herrick

TL;DR: In this article, the authors used quantum dots for photonic integration and achieved state-of-the-art performance and gain recovery at sub-picosecond timescales.

TL;DR: In this paper, the authors report significantly improved performance and reliability of quantum dot lasers enabled by a low threading dislocation density GaAs buffer layer, achieving continuous wave threshold currents as low as 6.2 mA and output powers of 185 mW.

TL;DR: In this paper, the authors investigated the impact of threading dislocation density on the reliability of 1.3 µm InAs quantum dot laser epitaxially grown on Si and achieved extrapolated lifetimes more than 10 × 106 h.

TL;DR: In this paper, the first reliability study of InAs/GaAs self-assembled quantum dot laser epitaxially grown on Ge/Si substrates was presented, which showed that some devices maintain lasing oscillation after more than 2700h of constant current stress at 30°C. No catastrophic failures were observed.