Perspectives on Advances in Quantum Dot Lasers and Integration with Si Photonic Integrated Circuits
Chen Shang,Yating Wan,Jennifer Selvidge,Eamonn T. Hughes,Robert W. Herrick,Kunal Mukherjee,Jianan Duan,Jianan Duan,Frédéric Grillot,Frédéric Grillot,Weng W. Chow,John E. Bowers +11 more
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This article is published in ACS Photonics.The article was published on 2021-09-15 and is currently open access. It has received 54 citations till now. The article focuses on the topics: Quantum dot laser & Photonic integrated circuit.read more
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Silicon nitride passive and active photonic integrated circuits: trends and prospects
TL;DR: The use of silicon nitride in integrated photonics has rapidly progressed in recent decades as mentioned in this paper , and the integration of Si and III-V materials has enabled new large-scale, advanced silicon-nitride-based photonic integrated circuits with versatile functionality.
Journal ArticleDOI
Silicon Photonics for High-Capacity Data Communications
Yaocheng Shi,Yongbo Zhang,Yating Wan,Yuguang Zhang,Xiao Hu,Xi Xiao,Hong Yun Xu,Yu Yu,Long Zhang,Bingcheng Pan +9 more
TL;DR: In this paper , a review of recent progress for silicon PICs is presented, including low-loss waveguides, passive devices, modulators, photodetectors, heterogeneously integrated lasers, and so on.
Journal ArticleDOI
Integrated Lasers on Silicon at Communication Wavelength: A Progress Review
Nanxi Li,Guanyu Chen,Doris K. T. Ng,Leh W. Lim,Jin Xue,Chong Pei Ho,Yuan Hsing Fu,Lennon Y. T. Lee +7 more
TL;DR: In this paper , the authors present the development progress of integrated laser sources on Si, with the focus on the wavelength regimes for communication, including III-V semiconductor based laser, germanium/germanium tin-based laser, Raman based laser and rare earth-doped laser.
Journal ArticleDOI
Prospects and applications of on-chip lasers
TL;DR: In this paper , the state-of-the-art in different aspects of application-driven on-chip silicon lasers is discussed from device-level and system-wide points of view.
Journal ArticleDOI
Dislocation Filter Based on LT-GaAs Layers for Monolithic GaAs/Si Integration
M. O. Petrushkov,D. S. Abramkin,E.A. Emelyanov,Mikhail A. Putyato,O. S. Komkov,D. D. Firsov,A. V. Vasev,Mikhail Yu. Yesin,A. K. Bakarov,I. D. Loshkarev,Anton K. Gutakovskii,Victor V. Atuchin,V. V. Preobrazhenskii +12 more
TL;DR: In this paper , the effects of intermediate LT-GaAs layers and of the post-growth and cyclic in situ annealing on the structural properties of GaAs/LT-GAAs/GaAs/Si(001) HSs were studied.
References
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Multidimensional quantum well laser and temperature dependence of its threshold current
Yasuhiko Arakawa,H. Sakaki +1 more
TL;DR: In this paper, a new type of semiconductor laser is studied, in which injected carriers in the active region are quantum mechanically confined in two or three dimensions (2D or 3D), and the effects of such confinements on the lasing characteristics are analyzed.
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TL;DR: The demonstration of a continuous-wave silicon Raman laser is demonstrated and it is shown that TPA-induced FCA in silicon can be significantly reduced by introducing a reverse-biased p-i-n diode embedded in a silicon waveguide.
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Electrically pumped continuous-wave III–V quantum dot lasers on silicon
Siming Chen,Wei Li,Jiang Wu,Qi Jiang,Mingchu Tang,Samuel Shutts,Stella N. Elliott,Angela Sobiesierski,Alwyn J. Seeds,Ian M. Ross,Peter Michael Smowton,Huiyun Liu +11 more
TL;DR: In this paper, the authors demonstrate continuous-wave InAs/GaAs quantum dot lasers directly grown on silicon substrates with a low threshold current density of 62.5 cm−2, a room-temperature output power exceeding 105mW and operation up to 120°C.
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Linewidth broadening factor in semiconductor lasers--An overview
Marek Osinski,J. Buus +1 more
TL;DR: In this article, the authors present an overview of topics related to one of the fundamental parameters for semiconductor lasers-the linewidth broadening factor α that describes the coupling between carrier-concentration-induced variations of real and imaginary parts of susceptibility.