Roger McMurtrie

TL;DR: It is shown that the two orbital branches associated with the 3E excited state are averaged when operating at room temperature, leading to an improved physical understanding of the NV defect electronic structure, which is invaluable for the development of diamond-based quantum information processing.

TL;DR: In this paper, the first excited state sublevel structure of single nitrogen-vacancy (NV) color centres in diamond was shown to be an orbital doublet, where one branch supports an efficient cycling transition, while the other can simultaneously support fully allowed optical Raman spin-flip transitions.

TL;DR: In this article, the emission intensity of diamond samples containing negatively charged nitrogen-vacancy centres is measured as a function of magnetic field along the 111 direction for various temperatures, at low temperatures the responses are sample and stress dependent and can be modelled in terms of the previous understanding of the 3E excited state fine structure which is strain dependent.

TL;DR: In this article, the emission intensity of diamond samples containing nitrogen-vacancy centres is measured as a function of magnetic field along a direction for various temperatures, at low temperatures the responses are sample and stress dependent and can be modeled in terms of the previous understanding of the 3E excited state fine structure which is strain dependent.

TL;DR: In this article, features associated with the cross relaxation between spin of the ground electric state of the nitrogen vacancy center (NV) and other impurity spins, mainly substitutional nitrogen, N S, are observed as changes of the emission intensity as a function of external magnetic field.