R
Rudresh Ghosh
Researcher at University of Texas at Austin
Publications - 39
Citations - 1861
Rudresh Ghosh is an academic researcher from University of Texas at Austin. The author has contributed to research in topics: Monolayer & Transistor. The author has an hindex of 19, co-authored 39 publications receiving 1592 citations. Previous affiliations of Rudresh Ghosh include University of North Carolina at Chapel Hill.
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Journal ArticleDOI
Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer Molybdenum Disulfide by Amorphous Titanium Suboxide Encapsulation.
Amritesh Rai,Amithraj Valsaraj,Hema C. P. Movva,Anupam Roy,Rudresh Ghosh,Sushant Sonde,Sangwoo Kang,Jiwon Chang,Tanuj Trivedi,Rik Dey,Samaresh Guchhait,Stefano Larentis,Leonard F. Register,Emanuel Tutuc,Sanjay K. Banerjee +14 more
TL;DR: A high-κ dielectric is demonstrated that serves as an effective n-type charge transfer dopant on monolayer (ML) molybdenum disulfide (MoS2).
Journal ArticleDOI
Structure–Property Relationships in Phosphonate-Derivatized, RuII Polypyridyl Dyes on Metal Oxide Surfaces in an Aqueous Environment
Kenneth Hanson,M. Kyle Brennaman,Akitaka Ito,Hanlin Luo,Wenjing Song,Kelsey A. Parker,Rudresh Ghosh,Michael R. Norris,Christopher R. K. Glasson,Javier C. Concepcion,Rene Lopez,Thomas J. Meyer +11 more
TL;DR: In this article, the photophysical and electrochemical properties of a series of six phosphonate-derivatized [Ru(bpy)3]2+ complexes in aqueous solution and bound to ZrO2 and TiO2 surfaces were reported.
Journal ArticleDOI
Large-Area Monolayer MoS2 for Flexible Low-Power RF Nanoelectronics in the GHz Regime
Hsiao-Yu Chang,Maruthi N. Yogeesh,Rudresh Ghosh,Amritesh Rai,Atresh Sanne,Shixuan Yang,Nanshu Lu,Sanjay K. Banerjee,Deji Akinwande +8 more
TL;DR: Flexible synthesized MoS2 transistors are advanced to perform at GHz speeds and analog circuits are realized that are mechanically robust for 10,000 bending cycles.
Journal ArticleDOI
Radio Frequency Transistors and Circuits Based on CVD MoS2
Atresh Sanne,Rudresh Ghosh,Amritesh Rai,Maruthi N. Yogeesh,Seung Heon Shin,Ankit Sharma,Karalee Jarvis,Leo Mathew,Rajesh A. Rao,Deji Akinwande,Sanjay K. Banerjee +10 more
TL;DR: The results of gigahertz frequency performance as well as analog circuit operation show that large area CVD MoS2 may be suitable for industrial-scale electronic applications.
Journal ArticleDOI
Electric-field-driven phase transition in vanadium dioxide
TL;DR: In this article, local probe measurements of currentvoltage and electrostatic force-voltage characteristics of electric-field-induced insulator to metal transition in VO${}_{2}$ thin film are reported.