Emanuel Tutuc

TL;DR: It is shown that graphene grows in a self-limiting way on copper films as large-area sheets (one square centimeter) from methane through a chemical vapor deposition process, and graphene film transfer processes to arbitrary substrates showed electron mobilities as high as 4050 square centimeters per volt per second at room temperature.

TL;DR: It was found that the presence of surface oxygen could limit the number of nucleation sites and allowed centimeter-scale domains to grow through a diffusion-limited mechanism, and the electrical conductivity of the graphene was comparable to that of exfoliated graphene.

TL;DR: In this paper, multiple interlayer exciton resonances with either positive or negative circularly polarized emission were observed in a molybdenum diselenide/tungsten diselinide (MoSe2/WSe2) heterobilayer with a small twist angle.

TL;DR: In this article, dual-gated graphene field effect transistors (FETs) using Al2O3 as top-gate dielectric were constructed using a thin Al film as a nucleation layer to enable the atomic layer deposition of Al 2O3.

TL;DR: In this paper, dual-gated graphene field effect transistors using Al2O3 as top-gate dielectric were constructed using a thin Al film as a nucleation layer to enable the atomic layer deposition of Al 2O3.