L
Leonard F. Register
Researcher at University of Texas at Austin
Publications - 218
Citations - 4343
Leonard F. Register is an academic researcher from University of Texas at Austin. The author has contributed to research in topics: Quantum tunnelling & Field-effect transistor. The author has an hindex of 32, co-authored 215 publications receiving 3956 citations. Previous affiliations of Leonard F. Register include University of Illinois at Urbana–Champaign.
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Analytic model for direct tunneling current in polycrystalline silicon-gate metal–oxide–semiconductor devices
TL;DR: In this paper, an analytic model of the direct tunneling current in metal-oxide-semiconductor devices as a function of oxide field is presented, and accurate modeling of the low-field roll-off in the current results from proper modeling of field dependencies of the sheet charge, electron impact frequency on the interface, and tunneling probability.
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Bilayer PseudoSpin Field-Effect Transistor (BiSFET): A Proposed New Logic Device
TL;DR: In this article, a new type of graphene-based transistor was proposed to allow lower voltage, lower power operation than possible with complementary metal-oxide-semiconductor (CMOS) field effect transistors.
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Mechanism of stress-induced leakage current in MOS capacitors
TL;DR: In this article, stress-induced leakage current (SILC) is examined both below and above the voltage at which the preexisting Fowler-Nordheim tunneling current dominates.
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Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer Molybdenum Disulfide by Amorphous Titanium Suboxide Encapsulation.
Amritesh Rai,Amithraj Valsaraj,Hema C. P. Movva,Anupam Roy,Rudresh Ghosh,Sushant Sonde,Sangwoo Kang,Jiwon Chang,Tanuj Trivedi,Rik Dey,Samaresh Guchhait,Stefano Larentis,Leonard F. Register,Emanuel Tutuc,Sanjay K. Banerjee +14 more
TL;DR: A high-κ dielectric is demonstrated that serves as an effective n-type charge transfer dopant on monolayer (ML) molybdenum disulfide (MoS2).
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Gate-Tunable Resonant Tunneling in Double Bilayer Graphene Heterostructures
Babak Fallahazad,Kayoung Lee,Sangwoo Kang,Jiamin Xue,Stefano Larentis,Chris M. Corbet,Kyounghwan Kim,Hema C. P. Movva,Takashi Taniguchi,Kenji Watanabe,Leonard F. Register,Sanjay K. Banerjee,Emanuel Tutuc +12 more
TL;DR: In this article, gate-tunable resonant tunneling and negative differential resistance in the interlayer currentvoltage characteristics of rotationally aligned double bilayer graphene heterostructures separated by hexagonal boron nitride (hBN) dielectric.