CuInSe2 and its alloys with Ga and/or S are among the most promising absorber materials for thin film solar cells. CuInSe2-based solar cells have shown long-term stability and the highest conversion efficiencies of all thin film solar cells, above 19%. Solar cells based on these materials are also very stable, thus allowing long operational lifetimes. The preparation of a thin film solar cell is a multistage process where every step affects the resulting cell performance and the production cost. CuInSe2 and other Cu chalcopyrites can be prepared by a variety of methods, ranging from physical vapor deposition methods such as evaporation and sputtering to low-temperature liquid phase methods such as electrodeposition. The present review discusses first the concept and operation principle of thin film solar cells, as well as the most important thin film solar cell materials. Next, the properties of CuInSe2 and related compounds, as well as features of solar cells made thereof are reviewed. The last ...

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Thin Film Deposition Methods for CuInSe2Solar Cells

For some time, the chalcopyrite semiconductor CuInSe2 and its alloy with Ga and/or S [Cu(InGa)Se2 or Cu(InGa)(Se,S)2], commonly referred as CIGS, have been leading thin-film material candidates for incorporation in high-efficiency photovoltaic devices. CuInSe2-based solar cells have shown long-term stability and the highest conversion efficiencies among all thin-film solar cells, reaching 20%. A variety of methods have been reported to prepare CIGS thin film. Efficiency of solar cells depends upon the various deposition methods as they control optoelectronic properties of the layers and interfaces. CIGS thin film grown on glass or flexible (metal foil, polyimide) substrates require p-type absorber layers of optimum optoelectronic properties and n-type wideband gap partner layers to form the p-n junction. Transparent conducting oxide and specific metal layers are used for front and back contacts. Progress made in the field of CIGS solar cell in recent years has been reviewed.

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Progress in Polycrystalline Thin-Film Cu(In,Ga) Solar Cells

A novel one-step electrodeposition to prepare single-phase CuInS2 thin films for solar cells

The Effect of Thickness on Optical Band Gap and N-type Conductivity of CuInS2 Thin Films Annealed in Air Atmosphere☆

Use of diethylselenide as a less-hazardous source for preparation of CuInSe2 photo-absorbers by selenization of metal precursors

Synthesis of CuInS2 films by sulphurization of Cu/In stacked elemental layers

CuIn(SxSe1−x)2 films prepared by graphite box annealing of In/Cu stacked elemental layers

CuIn1-xGaxS2 films were synthesized by graphite-box annealing of In/Ga/Cu stacked elemental layers (SEL) in the presence of sulphur vapour. The effects of the ambient gas, annealing temperature and duration of annealing on the microstructure of the films synthesized during annealing were studied. The films were characterized by measuring the microstructure and the optical and electrical properties. The effect of grain boundary scattering on the electron transport process was also studied.

https://iopscience.iop.org/article/10.1088/0022-3727/34/17/302/pdf

S. Bandyopadhyaya

Papers

Synthesis of CuInS2 films by sulphurization of Cu/In stacked elemental layers

CuIn(SxSe1−x)2 films prepared by graphite box annealing of In/Cu stacked elemental layers

Characterization of CuIn1-xGaxS2 films synthesized by graphite-box annealing of stacked elemental layers

In-situ CdCl2 treatment in CdTe films synthesized by rapid thermal annealing technique