Journal ArticleDOI
Synthesis of CuInS2 films by sulphurization of Cu/In stacked elemental layers
TLDR
In this article, the authors synthesize CuInS2 films by sulphurization of In/Cu stacked elemental layers (SEL) deposited onto glass and Mo-coated glass substrates by graphite box annealing at temperatures of 620-880 K. The properties of these films were characterized by measuring electrical, optical, microstructural and photoluminescence properties.About:
This article is published in Solar Energy Materials and Solar Cells.The article was published on 2000-02-01. It has received 59 citations till now. The article focuses on the topics: Annealing (metallurgy).read more
Citations
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A novel one-step electrodeposition to prepare single-phase CuInS2 thin films for solar cells
TL;DR: In this article, a single-phase and void-free CuInS2 thin film with a band gap of 1.54 eV was proposed for solar cells, satisfying the requirement of the absorber layers in solar cells.
Journal ArticleDOI
The Effect of Thickness on Optical Band Gap and N-type Conductivity of CuInS2 Thin Films Annealed in Air Atmosphere☆
TL;DR: In this article, structural, electrical and optical properties of CuInS2 thin films of various thicknesses, grown on heated glass substrates at 100°C by thermal evaporation method were studied.
Journal ArticleDOI
Deposition of copper iodide thin films by chemical bath deposition (CBD) and successive ionic layer adsorption and reaction (SILAR) methods
TL;DR: In this article, structural, morphological, electrical studies of copper iodide (CuI) thin films deposited onto glass substrates by chemical bath deposition (CBD) and successive ionic layer adsorption and reaction (SILAR) methods were characterized for their structural and morphological studies by means of X-ray diffraction (XRD), FT-Raman spectroscopy, scanning electron microscopy (SEM), optical absorption, and contact angle measurement methods.
Journal ArticleDOI
Synthesis of hexagonal structured wurtzite and chalcopyrite CuInS2 via a simple solution route
TL;DR: Through a simple and quick solution route, both wurtzite- and chalcopyrite-structure CIS are synthesized, and well-controlled wurtZite CIS hexagonal plates are obtained when an appropriate agent is added.
Journal ArticleDOI
Characterization of CuInS2 thin films prepared by ion layer gas reaction method
TL;DR: In this paper, the influence of [Cu] −/−[In] ratio in ethanol solution on structural, chemical, topographical, optical and electrical properties of CuInS 2 thin films was investigated.
References
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The electrical properties of polycrystalline silicon films
TL;DR: In this article, Boron doses of 1×1012-5×1015/cm2 were implanted at 60 keV into 1-μm-thick polysilicon films and Hall and resistivity measurements were made over a temperature range −50-250 °C.
Book
Structure of Metals
TL;DR: The first serious application of the microscope to the study of metallic structure was made in 1864 by Dr. H. Sorby, of Sheffield, but the lead then given was not followed for nearly a quarter of a century as mentioned in this paper.
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Theory of Impurity Scattering in Semiconductors
TL;DR: In this paper, it was shown that the simple theory of lattice scattering alone cannot explain the temperature dependence of the resistivity of germanium semiconductors and that another probable source of resistance is scattering by ionized impurity centers.
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Transport properties of polycrystalline silicon films
TL;DR: In this article, the transport properties of polycrystalline silicon films are examined and interpreted in terms of a modified grain-boundary trapping model, based on the assumption of both a δ-shaped and a uniform energy distribution of interface states.