S
S. E. Lash
Researcher at North Carolina State University
Publications - 4
Citations - 293
S. E. Lash is an academic researcher from North Carolina State University. The author has contributed to research in topics: Thin film & Dielectric. The author has an hindex of 3, co-authored 4 publications receiving 291 citations.
Papers
More filters
Journal ArticleDOI
Ferroelectricity in thin films: The dielectric response of fiber-textured (BaxSr1−x)Ti1+yO3+z thin films grown by chemical vapor deposition
TL;DR: In this paper, the authors investigated the dielectric response of a series of fiber-textured (BaxSr1−x)Ti1+yO3+z samples deposited by liquid-source metalorganic chemical vapor deposition onto Pt/SiO2/Si, as a function of the two commonly varied microstructural parameters: film thickness and Ti nonstoichiometry y.
Journal ArticleDOI
Resistance degradation behavior of Ba0.7Sr0.3TiO3 thin films compared to mechanisms found in titanate ceramics and single crystals
M. Grossmann,Susanne Hoffmann,S. Gusowski,Rainer Waser,Stephen K. Streiffer,Cem Basceri,Charles B. Parker,S. E. Lash,Angus I. Kingon +8 more
TL;DR: In this paper, the degradation behavior of titanate single crystals and ceramics with respect to the dependence on parameters such as temperature, thickness of the sample, applied voltage, acceptor dopant concentration and electrode material is compared.
Journal ArticleDOI
An Important Failure Mechanism in MOCVD (Ba,Sr)TiO3 thin Films: Resistance Degradation
Cem Basceri,S. E. Lash,Charles B. Parker,Stephen K. Streiffer,Angus I. Kingon,M. Grossmann,Susanne Hoffmann,M. Schumacher,Rainer Waser,S. M. Bilodeau,R. Carlt,P. C. Van Buskirk,Scott R. Summerfelt +12 more
TL;DR: In this paper, the intrinsic resistance degradation behavior of fiber-textured MOCVD (Ba,Sr)TiO3 thin films appropriate for use in advanced DRAMs and integrated decoupling capacitors, as a function of applied voltage polarity, thickness, temperature, and dc bias/field, was investigated.
Proceedings ArticleDOI
The influence of strain on the dielectric behavior of (Ba/sub x/Sr/sub 1-x/)Ti/sub 1+y/O/sub 3+z/ thin films grown by LS-MOCVD on Pt/SiO/sub 2//Si
Stephen K. Streiffer,Cem Basceri,Charles B. Parker,S. E. Lash,J. A. Christman,H. Maiwa,Angus I. Kingon +6 more
TL;DR: In this paper, the in-plane biaxial strain is estimated to be approximately 0.7% and the thickness-corrected dielectric behavior perpendicular to the substrate for these samples shows evidence of coupling to such an inplane phase transition at approximately 390 K, as manifested by deviation from Curie-Weisslike behavior at this temperature.