Angus I. Kingon

TL;DR: An overview of the state of the art in ferroelectric thin films is presented in this paper, where the authors review applications: micro-systems' applications, applications in high frequency electronics, and memories based on Ferroelectric materials.

TL;DR: Development of higher permittivity dielectrics for dynamic random-access memories serves to illustrate the magnitude of the now urgent problem of identifying alternatives to silicon dioxide for the gate dielectric in logic devices, such as the ubiquitous field-effect transistor.

TL;DR: The temperature and field-dependent permittivities of fiber-textured Ba0.7Sr0.3TiO3 thin films grown by liquid-source metalorganic chemical vapor deposition were investigated as a function of film thickness as discussed by the authors.

TL;DR: In this paper, the Schottky approximation was used to explain the super-ohmic behavior at higher fields, but the barrier lowering is stronger than expected from this theory, while the leakage mechanism is comparable to SrTiO3 thin films prepared by chemical solution deposition, the absolute values of the leakage current are significantly lower for metalorganic chemical vapor deposition (MOCVD) prepared BST film.

TL;DR: In this paper, it is shown that it is possible to process lead zirconate (Pb(Zr0.52Ti0.48)O3) thin films directly on base metal copper foils.