S
S. Gangopadhyay
Publications - 3
Citations - 511
S. Gangopadhyay is an academic researcher. The author has contributed to research in topics: Noise-equivalent power & Schottky barrier. The author has an hindex of 3, co-authored 3 publications receiving 498 citations.
Papers
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Journal ArticleDOI
Low noise p-π-n GaN ultraviolet photodetectors
Andrei Osinsky,S. Gangopadhyay,Remigijus Gaska,B. Williams,M.A. Khan,D.V. Kuksenkov,Henryk Temkin +6 more
TL;DR: In this paper, the authors report on the fabrication and characterization of p-π-n GaN ultraviolet detectors and show that the photoresponse is RC-limited with the response time decreasing from 17.4 ns at zero bias to 10.3 ns at −6 V bias.
Journal ArticleDOI
Schottky barrier photodetectors based on AlGaN
Andrei Osinsky,S. Gangopadhyay,B. W. Lim,M. Z. Anwar,M.A. Khan,D. V. Kuksenkov,Henryk Temkin +6 more
TL;DR: In this article, the authors report solar-blind AlxGa1−xN photovoltaic detectors with cutoff wavelengths as short as 290 nm, with spectral responsivity of the devices near the cutoff wavelength is 0.07 A/W.
Journal ArticleDOI
Visible-blind GaN Schottky barrier detectors grown on Si(111)
Andrei Osinsky,S. Gangopadhyay,J. W. Yang,Remigijus Gaska,D. V. Kuksenkov,Henryk Temkin,I. K. Shmagin,Yun-Chorng Chang,John F. Muth,R. M. Kolbas +9 more
TL;DR: In this paper, Wurtzite structure epitaxial GaN exhibits room-temperature photoluminescence with a band-edge-related emission width as narrow as 7 nm and intensities comparable to high quality layers grown on sapphire by metalorganic chemical vapor deposition.