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I. K. Shmagin
Researcher at North Carolina State University
Publications - 20
Citations - 1108
I. K. Shmagin is an academic researcher from North Carolina State University. The author has contributed to research in topics: Photoluminescence & Metalorganic vapour phase epitaxy. The author has an hindex of 12, co-authored 20 publications receiving 1054 citations.
Papers
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Journal ArticleDOI
Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements
John F. Muth,Jae-Hoon Lee,I. K. Shmagin,R. M. Kolbas,H. C. Casey,Bernd Keller,Umesh K. Mishra,Steven P. DenBaars +7 more
TL;DR: In this paper, the absorption coefficient for a 0.4-μm-thick GaN layer grown on a polished sapphire substrate was determined from transmission measurements at room temperature.
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Visible-blind GaN Schottky barrier detectors grown on Si(111)
Andrei Osinsky,S. Gangopadhyay,J. W. Yang,Remigijus Gaska,D. V. Kuksenkov,Henryk Temkin,I. K. Shmagin,Yun-Chorng Chang,John F. Muth,R. M. Kolbas +9 more
TL;DR: In this paper, Wurtzite structure epitaxial GaN exhibits room-temperature photoluminescence with a band-edge-related emission width as narrow as 7 nm and intensities comparable to high quality layers grown on sapphire by metalorganic chemical vapor deposition.
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Growth of bulk InGaN films and quantum wells by atmospheric pressure metalorganic chemical vapour deposition
Sarah L. Keller,Bernd Keller,D. Kapolnek,Umesh K. Mishra,Steven P. DenBaars,I. K. Shmagin,R. M. Kolbas,S. Krishnankutty +7 more
TL;DR: In this article, single quantum wells embedded in InGaN of graded composition showed superior properties compared to quantum wells with In0.04Ga0.94N barriers of constant composition.
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Growth and characterization of GaN single crystals
Cengiz M. Balkas,Zlatko Sitar,Leah Bergman,I. K. Shmagin,John F. Muth,R. M. Kolbas,Robert J. Nemanich,Robert F. Davis +7 more
TL;DR: In this paper, up to 3mm long GaN single crystals were grown by sublimation of cold pressed GaN pellets or evaporation of gallium (Ga) metal under an ammonia (NH 3 ) flow in a dual heater, high-temperature growth system.
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Photoluminescence from mechanically milled si and sio2 powders
Tongde Shen,I. K. Shmagin,Carl C. Koch,R. M. Kolbas,Y. Fahmy,Leah Bergman,Robert J. Nemanich,M. T. McClure,Zlatko Sitar,M. X. Quan +9 more
TL;DR: The photoluminescence (PL) in as-received and milled Si and SiO2 powder is reported in this paper, where the results indicate that the Si powder has amorphous Si oxide and suboxide surface layers.