R
Remigijus Gaska
Researcher at Columbia University
Publications - 60
Citations - 4867
Remigijus Gaska is an academic researcher from Columbia University. The author has contributed to research in topics: Light-emitting diode & Field-effect transistor. The author has an hindex of 31, co-authored 60 publications receiving 4696 citations. Previous affiliations of Remigijus Gaska include Rensselaer Polytechnic Institute.
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AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor
TL;DR: In this paper, the authors report on the AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor (MOS-HFET) and present the results of the comparative studies of this device and a base line AlGa n/Ga n heterostructured transistor (HFET), for a 5/spl mu/ source-to-drain opening, the maximum current was close to 600 mA/mm for both devices.
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Nonresonant Detection of Terahertz Radiation in Field Effect Transistors
Wojciech Knap,V. Kachorovskii,Yanqing Deng,Sergey Rumyantsev,Jian Lu,Remigijus Gaska,Michael Shur,Grigory Simin,Xiaobo Sharon Hu,M. Asif Khan,C. A. Saylor,L. C. Brunel +11 more
TL;DR: In this paper, the photoresponse measured as a function of the gate voltage exhibited a maximum near the threshold voltage, which can be explained by the combined effect of exponential decrease of the electron density and the gate leakage current.
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AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates
M. Asif Khan,Xiaobo Sharon Hu,A. Tarakji,Grigory Simin,J. W. Yang,Remigijus Gaska,Michael Shur +6 more
TL;DR: In this paper, an AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistors (MOS-HFETs) were developed for high power microwave and switching devices.
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Self-heating in high-power AlGaN-GaN HFETs
TL;DR: In this article, the authors compare self-heating effects in AlGaN-GaN heterostructure field effect transistors (HFETs) grown on sapphire and SiC substrates.
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High-temperature performance of AlGaN/GaN HFETs on SiC substrates
TL;DR: In this article, the performance results of AlGaN-GaN Heterostructure Field Effect Transistors (HFETs) grown on SiC substrates are reported, and the maximum transconductance of these devices was 142 mS/mm and the source-drain current was as high as 0.95 A/mm.