S
S. Goel
Researcher at University of Louisiana at Lafayette
Publications - 18
Citations - 714
S. Goel is an academic researcher from University of Louisiana at Lafayette. The author has contributed to research in topics: Motion estimation & XNOR gate. The author has an hindex of 9, co-authored 18 publications receiving 650 citations. Previous affiliations of S. Goel include Advanced Micro Devices & Samsung.
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Journal ArticleDOI
Design of Robust, Energy-Efficient Full Adders for Deep-Submicrometer Design Using Hybrid-CMOS Logic Style
TL;DR: The proposed full adder is energy efficient and outperforms several standard full adders without trading off driving capability and reliability and is based on a novel xor-xnor circuit that generates xor and xnor full-swing outputs simultaneously.
Journal ArticleDOI
Design methodologies for high-performance noise-tolerant XOR-XNOR circuits
TL;DR: Novel methodologies for designing energy-efficient noise-tolerant exclusive-OR-exclusive- NOR circuits that can operate at low-supply voltages with good signal integrity and driving capability are proposed and prove to be faster and successfully work at all ranges of supply voltage.
Proceedings ArticleDOI
On the design of low-energy hybrid CMOS 1-bit full adder cells
TL;DR: Several designs for 1-bit full adder cell featuring hybrid CMOS logic style based on a novel XOR-XNOR circuit that simultaneously produces XOR and XNOR full-swing outputs and outperforms its best counterpart showing 39% improvement in PDP.
Proceedings ArticleDOI
Adaptive search window size algorithm for fast motion estimation in H.264/AVC standard
TL;DR: This work reduces the computational cost of H.264/AVC by reducing the search space without significant loss in quality and shows that there is at least 90% reduction in computation with a maximum loss of 1.4dB.
Proceedings ArticleDOI
Noise tolerant low voltage XOR-XNOR for fast arithmetic
TL;DR: Results using 0.18m CMOS technology and HSPICE for simulation show that the proposed XOR-XNOR circuit is more noise-immune and displays better power-delay product characteristics than the compared circuit.