S
S. Kambayashi
Researcher at Toshiba
Publications - 23
Citations - 516
S. Kambayashi is an academic researcher from Toshiba. The author has contributed to research in topics: Silicon & Amorphous silicon. The author has an hindex of 11, co-authored 23 publications receiving 513 citations.
Papers
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Journal ArticleDOI
Two-dimensional simulation and measurement of high-performance MOSFETs made on a very thin SOI film
TL;DR: In this paper, a capacitance coupling model has been proposed to explain the sub-threshold characteristics of silicon-on-insulator (SOI) MOSFETs.
Journal ArticleDOI
Analysis of the drain breakdown mechanism in ultra-thin-film SOI MOSFETs
TL;DR: In this article, the authors studied the drain breakdown phenomenon in ultra-thin-film (silicon-on-insulator) SOI MOSFETs and showed that the drain structure plays a major role in determining the drain voltage.
Patent
Semiconductor device and its fabricating method
Takako Okada,S. Kambayashi,Moto Yabuki,Shinji Onga,Yoshitaka Tsunashima,Yuuichi Mikata,Haruo Okano +6 more
TL;DR: In this paper, an amorphous semiconductor thin film is formed on a substrate or an insulating film such that an average inter-atomic distance distribution of main constituent element of the film substantially coincides with the average interatomic distance distributions of the element in a single crystal.
Patent
Method of manufacturing a semiconductor device with oxide mediated epitaxial layer
TL;DR: In this article, a process is provided with which amorphous silicon or polysilicon is deposited on a semiconductor substrate, and then a low-temperature solid phase growth method is employed to selectively form amorphus silicon into single crystal silicon on only an exposed portion of the semiconductor substrategies.
Patent
Semiconductor device with oxide mediated epitaxial layer
TL;DR: In this paper, a process is provided with which amorphous silicon or polysilicon is deposited on a semiconductor substrate, and a low-temperature solid phase growth method is employed to selectively form amorphus or poly-silicon into single crystal silicon on only an exposed portion of the semiconductor substrategies.