K
Koichi Kato
Researcher at Toshiba
Publications - 43
Citations - 1094
Koichi Kato is an academic researcher from Toshiba. The author has contributed to research in topics: Layer (electronics) & Silicide. The author has an hindex of 12, co-authored 43 publications receiving 1080 citations.
Papers
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Journal ArticleDOI
Kinetics of Initial Layer-by-Layer Oxidation of Si(001) Surfaces
Heiji Watanabe,Koichi Kato,Tsuyoshi Uda,Ken Fujita,Masakazu Ichikawa,Takaaki Kawamura,Kiyoyuki Terakura +6 more
TL;DR: In this paper, layer-by-layer oxidation of Si(001) surfaces has been studied by scanning reflection electron microscopy (SREM), and the oxidation kinetics of the top and second layers were independently investigated from the change in oxygen Auger peak intensity calibrated from the SREM observation.
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Backbond Oxidation of the Si(001) Surface: Narrow Channel of Barrierless Oxidation
TL;DR: In this article, the authors have clarified the apparent barrierless reaction mechanism of the backbond oxidation of the surface Si by incoming incoming molecules and found that the triplet-to-singlet spin conversion is crucial in explaining the incident energy dependence of the sticking probability of the Si molecules.
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Analysis of kink characteristics in Silicon-on-insulator MOSFET's using two-carrier modeling
Koichi Kato,T. Wada,K. Taniguchi +2 more
TL;DR: In this paper, an exact SOI device simulator applicable to prediction of the transistor characteristics in high-current region is developed, where the basic Poisson's and current continuity equations are numerically solved under steady-state condition.
Journal ArticleDOI
Chemisorption of a single oxygen molecule on the Si(100) surface: Initial oxidation mechanisms
Koichi Kato,Tsuyoshi Uda +1 more
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Analysis of the drain breakdown mechanism in ultra-thin-film SOI MOSFETs
TL;DR: In this article, the authors studied the drain breakdown phenomenon in ultra-thin-film (silicon-on-insulator) SOI MOSFETs and showed that the drain structure plays a major role in determining the drain voltage.