S
Shinji Onga
Researcher at Toshiba
Publications - 37
Citations - 382
Shinji Onga is an academic researcher from Toshiba. The author has contributed to research in topics: Silicon & Electron mobility. The author has an hindex of 9, co-authored 37 publications receiving 382 citations.
Papers
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Patent
Semiconductor device and its fabricating method
Takako Okada,S. Kambayashi,Moto Yabuki,Shinji Onga,Yoshitaka Tsunashima,Yuuichi Mikata,Haruo Okano +6 more
TL;DR: In this paper, an amorphous semiconductor thin film is formed on a substrate or an insulating film such that an average inter-atomic distance distribution of main constituent element of the film substantially coincides with the average interatomic distance distributions of the element in a single crystal.
Journal ArticleDOI
Characterization of Polycrystalline Silicon MOS Transistors and Its Film Properties. I
TL;DR: In this paper, the characterization of polycrystalline silicon MOS transistors and its film properties is studied, with special emphasis on the relationship between crystalline defects and carrier transport phenomena.
Patent
Semiconductor device manufacturing method, manufacturing apparatus, simulation method and simulator
TL;DR: In this article, a semiconductor device manufacturing method capable of proceeding semiconductor devices manufacturing processes according to predetermined schedules or while correcting them without testpieces is provided, which includes the steps of collecting actually observed data during at least one of plural steps, obtaining prediction data by using an ab initio molecular dynamics process simulator or a molecular dynamics simulator, comparing and verifying the prediction data and the actual observed data sequentially at real-time, and correcting and processing the plural manufacturing process factors.
Patent
Semiconductor device with monocrystalline gate insulating film
Shinji Onga,Takako Okada,Kouichirou Inoue,Yoshiaki Matsushita,Kikuo Yamabe,Hiroaki Hazama,Haruo Okano +6 more
TL;DR: In this paper, a monocrystalline silicon substrate has a (100) plane orientation, and the insulating film essentially consists of β-cristobalite having a unit structure in a P4 1 2 1 2 2 structural expression.
Proceedings ArticleDOI
A simplified box (buried-oxide) isolation technology for megabit dynamic memories
TL;DR: In this article, a simplified version of BOX isolation technology is described and the capacitance measurement on diffused junctions in BOX structure shows smaller contributions from diode perimeter as compared to LOCOS structure.