M
Makoto Yoshimi
Researcher at Soitec
Publications - 76
Citations - 1365
Makoto Yoshimi is an academic researcher from Soitec. The author has contributed to research in topics: Silicon on insulator & CMOS. The author has an hindex of 19, co-authored 76 publications receiving 1357 citations. Previous affiliations of Makoto Yoshimi include Toshiba.
Papers
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Patent
Insulated-gate transistor having narrow-bandgap-source
Makoto Yoshimi,Satoshi Inaba,Atsushi Murakoshi,Mamoru Terauchi,Naoyuki Shigyo,Yoshiaki Matsushita,Masami Aoki,Takeshi Hamamoto,Yutaka Ishibashi,Tohru Ozaki,Hitomi Kawaguchiya,Kazuya Matsuzawa,Osamu Arisumi,Akira Nishiyama +13 more
TL;DR: In this article, the leakage current can be reduced while improving a drain breakdown voltage of an Insulated-Gate transistor such as a MOSFET, MOSSIT and a MISFET.
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Two-dimensional simulation and measurement of high-performance MOSFETs made on a very thin SOI film
TL;DR: In this paper, a capacitance coupling model has been proposed to explain the sub-threshold characteristics of silicon-on-insulator (SOI) MOSFETs.
Journal ArticleDOI
Analysis of the drain breakdown mechanism in ultra-thin-film SOI MOSFETs
TL;DR: In this article, the authors studied the drain breakdown phenomenon in ultra-thin-film (silicon-on-insulator) SOI MOSFETs and showed that the drain structure plays a major role in determining the drain voltage.
Patent
Semiconductor device having a projecting element region
TL;DR: In this paper, a semiconductor device with a projection-shaped semiconductor element region, a gate electrode formed through a gate insulating film on the upper face and side face of the element region and a first conductivity type source region and drain region provided in a manner to form a channel region across the gate electrode.
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A novel lateral bipolar transistor with 67 GHz f/sub max/ on thin-film SOI for RF analog applications
TL;DR: In this paper, a lateral bipolar transistor on thin-film silicon-on-insulator (SOI) is presented, which achieves the highest f/sub max/ of 67 GHz among SOI bipolar transistors.