A system includes a semiconductor device. The semiconductor device includes a first single crystal silicon layer comprising first transistors, first alignment marks, and at least one metal layer overlying the first single crystal silicon layer, wherein the at least one metal layer comprises copper or aluminum more than other materials; and a second single crystal silicon layer overlying the at least one metal layer. The second single crystal silicon layer comprises a plurality of second transistors arranged in substantially parallel bands. Each of a plurality of the bands comprises a portion of the second transistors along an axis in a repeating pattern.

System comprising a semiconductor device and structure

A device comprising semiconductor memories, the device comprising: a first layer and a second layer of layer-transferred mono-crystallized silicon, wherein the first layer comprises a first plurality of horizontally-oriented transistors; wherein the second layer comprises a second plurality of horizontally-oriented transistors; and wherein the second plurality of horizontally-oriented transistors overlays the first plurality of horizontally-oriented transistors.

Semiconductor device and structure

A method to process an Integrated Circuit device including processing a first layer of first transistors, then processing a first metal layer overlaying the first transistors and providing at least one connection to the first transistors, then processing a second metal layer overlaying the first metal layer, then processing a second layer of second transistors overlaying the second metal layer, wherein the second metal layer is connected to provide power to at least one of the second transistors.

Method for fabrication of a semiconductor device and structure

An Integrated Circuit device, including: a first layer including first single crystal transistors; a second layer overlaying the first layer, the second layer including second single crystal transistors, where the second layer thickness is less than one micron, where a plurality of the first transistors is circumscribed by a first dice lane of at least 10 microns width, and there are no first conductive connections to the plurality of the first transistors that cross the first dice lane, where a plurality of the second transistors are circumscribed by a second dice lane of at least 10 microns width, and there are no second conductive connections to the plurality of the second transistors that cross the second dice lane, and at least one thermal conducting path from at least one of the second single crystal transistors to an external surface of the device.

3D semiconductor device and structure

3-D sequential integration stands out from other 3-D schemes as it enables the full use of the third dimension. Indeed, in this approach, 3-D contact density matches with the transistor scale. In this paper, we report on the main advances enabling the demonstration of functional and performant stacked CMOS-FETs; i.e., wafer bonding, low temperature processes (<;650°C) and salicide stabilization achievements. This integration scheme enables fine grain partitioning and thus a gain in performance versus cost ratio linked to separation of heterogeneous technologies on distinct levels. In this work, we will detail examples taking advantage of the unique 3-D contact pitch achieved with sequential 3-D.

3-D Sequential Integration: A Key Enabling Technology for Heterogeneous Co-Integration of New Function With CMOS

This paper presents an innovative 3D architecture capable of overcoming pixel miniaturization drawbacks. Back-illuminated photodiodes are realized on a first silicon layer, while readout transistors are located on a second silicon layer. Implications of a sequential integration are evaluated in the perspective of low noise pixel performances with a comprehensive study on: 1/ setting the thermal budget limit to 700degC to preserve transfer gate performances, 2/ transferring high quality SOI by direct bonding 3/ processing HfO2/TiN fully depleted transistors, exhibiting noise levels close to standard 2.2 mum pixels, with improvement solutions.

Setting up 3D sequential integration for back-illuminated CMOS image sensors with highly miniaturized pixels with low temperature fully depleted SOI transistors

Plasma process interaction with BSI image sensor is for the first time analyzed. The dark current degradation is modulated by the nature of the anti-reflective layer used at the backside interface. Three ARC stacks are compared by measuring the charge and the interface state density. Due to their negative charge even after plasma, the stacks based on metal oxides present a better hardiness than Oxide-Nitride stack, for a n-type pixel. Al 2 O 3 provides the best passivation, allowing a reliable BSI image sensor against plasma damage.

A Highly Reliable Back Side Illuminated Pixel against Plasma Induced Damage

Knowing exactly potentials’ distribution in pixels is a key to ensure that electronretention and transport enable a good pixel operation. Moreover, it is also a key parameter for controlof charge storage capabilityor fullwell capacity, strongly driven by potential barriers. In this article, a new method is presented to characterize potentialswithin pixels from test structure measurements. The proposed method enables to extract potential under a gate, pinning potential of photodiodes or memories, and any potential along the charge path. It is based on the use of the Enz–Krummenacher–Vittoz (EKV) model together with measurements on adequate test structures. Thanks to the so-called “ ${Y}$ function series resistance correction,” the method can even be applied to test structuresincludingdevices in series as in real pixel. The method proposed here is assessed using Sentaurus technologycomputer-aided design (TCAD) simulation results. Such potentials extracted on the test structure can be used for process and pixel developments, devicemonitoring, reliability studies, and TCAD calibration.

CMOS Pixel Potentials Extraction Method From Test Structures Based on EKV Model

Semiconductor Quantum Dots (QDs) have invoked a high interest in the industrial optoelectronic applications due to their high photogeneration ability compared with Silicon materials, in addition to the ease of adjusting them to interact with specific wavelengths by controlling the QD size, whether as a light emitter such as screens or as a light receiver such as imaging applications. We investigate the reliability performance of an optimized (PbS) Quantum Film (QF) based photodiode, and we demonstrate that AC operations drastically improve the reliability performance of QD-based photodiodes.

S. Ricq

Papers

Setting up 3D sequential integration for back-illuminated CMOS image sensors with highly miniaturized pixels with low temperature fully depleted SOI transistors

A Highly Reliable Back Side Illuminated Pixel against Plasma Induced Damage

CMOS Pixel Potentials Extraction Method From Test Structures Based on EKV Model

Investigating Reliability of NIR QD-based Photodiodes Under Bias and Light Stres