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Saber Farjami Shayesteh

Researcher at University of Gilan

Publications -  28
Citations -  680

Saber Farjami Shayesteh is an academic researcher from University of Gilan. The author has contributed to research in topics: Nanoparticle & Band gap. The author has an hindex of 11, co-authored 28 publications receiving 505 citations.

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A first-principles study of the effects of atom impurities, defects, strain, electric field and layer thickness on the electronic and magnetic properties of the C2N nanosheet

TL;DR: In this article, the effect of layer thickness, electrical field and strain on the electronic properties of the C 2 N nanosheet was investigated, and it was shown that increasing the thickness of C 2 n can decrease the band gap and induce semiconductor-to-metal transition.
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C3N Monolayer: Exploring the Emerging of Novel Electronic and Magnetic Properties with Adatom Adsorption, Functionalizations, Electric Field, Charging, and Strain

TL;DR: Two-dimensional polyaniline with structural unit C3N is an indirect semiconductor with 0.4 eV band gap, which has attracted a lot of interest because of its unusual electronic, optoelectronic, ther...
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Two-dimensional carbon nitride (2DCN) nanosheets: Tuning of novel electronic and magnetic properties by hydrogenation, atom substitution and defect engineering

TL;DR: In this article, the structural, electronic, and magnetic properties of graphene and various two-dimensional carbon-nitride (2DNC) nanosheets were investigated by employing first-principles calculations within the framework of density functional theory.
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Introducing novel electronic and magnetic properties in C3N nanosheets by defect engineering and atom substitution.

TL;DR: This study shows how the band gap and magnetism in monolayer C3N can be tuned by introducing defects and atom substitution and can be a good candidate for future low dimensional devices.