S
Sabina Ronchin
Researcher at fondazione bruno kessler
Publications - 107
Citations - 1220
Sabina Ronchin is an academic researcher from fondazione bruno kessler. The author has contributed to research in topics: Detector & Silicon. The author has an hindex of 16, co-authored 103 publications receiving 1046 citations.
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Proceedings ArticleDOI
Development of Advanced Silicon 3D Sensors at FBK Using Stepper Lithography
Maurizio Boscardin,Francesco Ficorella,Sabina Ronchin,Sara Ferrari,R. Mendicino,Adriano Lai,Marco Meschini,Md. Arif Abdulla Samy,Gian-Franco Dalla Betta +8 more
TL;DR: In this article, columnar electrodes and trenched electrodes are used for 3D pixel sensors for high luminosity LHC detectors, which yield a much smaller minimum feature size and higher alignment accuracy.
Proceedings ArticleDOI
Investigation of 3D silicon microstrip detectors for the sLHC
S. Kühn,Gian-Franco Dalla Betta,Simon Eckert,Karl Jakobs,Ulrich Parzefall,Sabina Ronchin,A. Zoboli,Nicola Zorzi +7 more
TL;DR: In this article, the 3D single type columns (3D-STC) detectors were irradiated with 26 MeV protons to fluences up to 25×10 15 1-MeV equivalent neutrons(Neq)/cm 2 which corresponds to the fluences expected at the inner tracking layers of the sLHC before and after irradiations.
Proceedings ArticleDOI
The SMART detectors: development of radiation hard silicon devices for SLHC
Anna Macchiolo,Laura Borrello,Maurizio Boscardin,Mara Bruzzi,Donato Creanza,G.-F. Dalla Betta,M. DePalma,V. Eremin,Ettore Focardi,N. Manna,David Menichelli,Alberto Messineo,Claudio Piemonte,Sabina Ronchin,C. Tosi,E. Verbitskaya,Nicola Zorzi +16 more
TL;DR: In this paper, the SMART project, a collaboration of Italian research institutes funded by the I.F.N., has focused on the development of radiation hard silicon position sensitive detectors for the CERN Large Hadron Collider luminosity upgrade.
Journal ArticleDOI
PFM2: A 32 × 32 processor for X-ray diffraction imaging at FELs
Massimo Manghisoni,Lorenzo Fabris,Valerio Re,Gianluca Traversi,Lodovico Ratti,Marco Grassi,L. Lodola,Piero Malcovati,C. Vacchi,Lucio Pancheri,M. E. A. Benkechcache,G.-F. Dalla Betta,Hesong Xu,Giovanni Verzellesi,Sabina Ronchin,Maurizio Boscardin,G. Batignani,S. Bettarini,Giulia Casarosa,F. Forti,Marcello Giorgi,Antonio Paladino,Eugenio Paoloni,G. Rizzo,Fabio Morsani +24 more
TL;DR: In this paper, the PixFEL Matrix (PFM2) was designed in a 65 nm CMOS technology and consists of 32 × 32 pixels, each cell covers an area of 110 × 110 μm2 and includes a low-noise charge sensitive amplifier with dynamic signal compression, a time-variant shaper used to process the preamplifier output signal, a 10-bit successive approximation register (SAR) analog-to-digital converter (ADC) and digital circuitry for channel control and data readout.
Journal ArticleDOI
Efficiency measurements for 3D silicon strip detectors
U. Parzefall,Gian-Franco Dalla Betta,Maurizio Boscardin,Simon Eckert,Lars Eklund,Celeste Fleta,Karl Jakobs,M. Köhler,S. Kühn,Gregor Pahn,C. Parkes,David Pennicard,Sabina Ronchin,A. Zoboli,Nicola Zorzi +14 more
TL;DR: The 3D detector design, where electrodes are processed from underneath the strips into the silicon bulk material, provides a way to enhance the radiation tolerance of standard planar silicon strip detectors as mentioned in this paper.